Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2017, Vol. 26 Issue (8): 087308    DOI: 10.1088/1674-1056/26/8/087308
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress
Linna Zhao(赵琳娜)1, Peihong Yu(于沛洪)1, Zixiang Guo(郭子骧)3, Dawei Yan(闫大为)1, Hao Zhou(周浩)1, Jinbo Wu(吴锦波)1, Zhiqiang Cui(崔志强)1, Huarui Sun(孙华锐)2, Xiaofeng Gu(顾晓峰)1
1 Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;
2 School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China;
3 School of Earth and Space Sciences, University of Science and Technology of China, Hefei 230026, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn