Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge2Sb2Te5

doi:10.1088/1674-1056/23/4/048301

Abstract The effect of iron trichloride (FeCl₃) on chemical mechanical polishing (CMP) of Ge₂Sb₂Te₅ (GST) film is investigated in this paper. The polishing rate of GST increases from 38 nm/min to 144 nm/min when the FeCl₃ concentration changes from 0.01 wt% to 0.15 wt%, which is much faster than 20 nm/min for the 1 wt% H₂O₂-based slurry. This polishing rate trends are inversely correlated with the contact angle data of FeCl₃-based slurry on the GST film surface. Thus, it is hypothesized that the hydrophilicity of the GST film surface is associated with the polishing rate during CMP. Atomic force microscope (AFM) and optical microscope (OM) are used to characterize the surface quality after CMP. The chemical mechanism is studied by potentiodynamic measurements such as E_corr and I_corr to analyze chemical reaction between FeCl₃ and GST surface. Finally, it is verified that slurry with FeCl₃ has no influence on the electrical property of the post-CMP GST film by the resistivity-temperature (RT) tests.

Keywords: chemical mechanical polishing iron trichloride Ge₂Sb₂Te₅

Received: 25 June 2013
Revised: 22 September 2013
Accepted manuscript online:

PACS:

83.50.Jf

(Extensional flow and combined shear and extension)

Fund: Project supported by the National Integrate Circuit Research Program of China (Grant Nos. 2011ZX02704-002 and 2009ZX02030-001), the Funds from the Science and Technology Council of Shanghai, China (Grant Nos. 0952nm00200 and 10QB1403600), and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists.

Corresponding Authors: Wang Liang-Yong
E-mail: wly@mail.sim.ac.cn

About author: 83.50.jf

Cite this article:

Yan Wei-Xia (闫未霞), Wang Liang-Yong (王良咏), Zhang Ze-Fang (张泽芳), Liu Wei-Li (刘卫丽), Song Zhi-Tang (宋志棠) Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅ 2014 Chin. Phys. B 23 048301

[1]	Wang L Y, Song Z T, Zhong M, Liu W L, Yan W X, Qin F, He A D and Liu B 2012 Appl. Surf. Sci. 258 5185
[2]	Castro D T, Goux L, Hurkx G A M, Attenborough K, Delhougne R, Lisoni J, Edema F J, Zandt M A A, Wolters R A M, Gravesteijn D J, Verheijen M A, Kaiser M, Weemaes R G R and Wouters D J 2007 Electron Devices Meeting, December 10-12, 2007, Washington, DC, p. 315
[3]	Bez R 2009 Chalcogenide PCM: A Memory Technology for Next Decade IEEE IEDM Technology, December 7-9, 2009, Baltimore, MD, p. 1
[4]	Sun Z M, Zhou J and Ahuja R 2006 Phys. Rev. Lett. 96 055507
[5]	Zhang Z F, Liu W L and Song Z T 2011 J. Vac. Sci. Technol. B 29 011020
[6]	Cui H, Cho J Y, Hwang H S, Lim J H, Park J H, Park H S, Hong K and Park J G 2010 J. Electrochem. Soc. 157 H1036
[7]	Zhong M, Song Z T, Liu B, Feng S L and Chen B 2008 J. Electrochem. Soc. 155 H929
[8]	Krishnan M, Nalaskowski J W and Cook L M 2010 Chem. Rev. 110 178
[9]	Lee T Y, Lee I K, Choi B H and Park Y S 2007 US Patent Application 11967446 1-4
[10]	Cui H, Cho J Y, Hwang H S, Lin J H, Park J H, Park H S, Hong K and Park J G 2011 J. Electrochem. Soc. 158 H666
[11]	He A D, Song Z T, Liu B, Zhong M, Wang L Y, Lü Y G and Feng S L 2012 Chin. Phys. B 22 018503
[12]	Cho Y J, Cui H, Park J H, Yi S H and Park J G 2010 Electrochem. Solid-State Lett. 13 H155
[13]	Shin D H, Lee D H, Jeong M G, Park H S and Lim D S 2012 J. Electrochem. Soc. 159 H349
[14]	Barr T L and Seal S 1995 J. Vac. Sci. Technol. A 13 1239
[15]	Yan W X, Wang L Y, Zhang Z F, He A D, Zhong M, Liu W L, Wu L C and Song Z T 2012 Chin. Phys. Lett. 29 038301
[16]	Bardal E 2003 Corrosion and Protection (New York: Springer) p. 65

[1]	High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors Xiao-Juan Lian(连晓娟), Jin-Ke Fu(付金科), Zhi-Xuan Gao(高志瑄),Shi-Pu Gu(顾世浦), and Lei Wang(王磊). Chin. Phys. B, 2023, 32(1): 017304.
[2]	Mechanism of titanium-nitride chemical mechanical polishing Dao-Huan Feng(冯道欢), Ruo-Bing Wang(王若冰), Ao-Xue Xu(徐傲雪), Fan Xu(徐帆), Wei-Lei Wang(汪为磊), Wei-Li Liu(刘卫丽), and Zhi-Tang Song(宋志棠). Chin. Phys. B, 2021, 30(2): 028301.
[3]	A nano-scale mirror-like surface of Ti-6Al-4V attained by chemical mechanical polishing Chenliang Liang(梁晨亮), Weili Liu(刘卫丽), Shasha Li(李沙沙), Hui Kong(孔慧), Zefang Zhang(张泽芳), Zhitang Song(宋志棠). Chin. Phys. B, 2016, 25(5): 058301.
[4]	Polydisperse spherical colloidal silica particles: Preparation and application Hui Kong(孔慧), Junchao Huo(霍军朝), Chenliang Liang(梁晨亮), Shasha Li(李沙沙), Weili Liu(刘卫丽), Zhitang Song(宋志棠). Chin. Phys. B, 2016, 25(11): 118202.
[5]	Thermal effect of Ge₂Sb₂Te₅ in phase change memory device Li Jun-Tao (李俊焘), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Ren Kun (任堃), Zhu Min (朱敏), Xu Jia (徐佳), Ren Jia-Dong (任佳栋), Feng Gao-Ming (冯高明), Ren Wan-Chun (任万春), Tong Hao (童浩). Chin. Phys. B, 2014, 23(8): 087804.
[6]	Chemical mechanical planarization of Ge₂Sb₂Te₅ using IC1010 and Politex reg pads in acidic slurry He Ao-Dong (何敖东), Liu Bo (刘波), Song Zhi-Tang (宋志棠), Wang Liang-Yong (王良咏), Liu Wei-Li (刘卫丽), Feng Gao-Ming (冯高明), Feng Song-Lin (封松林). Chin. Phys. B, 2014, 23(8): 088502.
[7]	Mechanism of amorphous Ge₂Sb₂Te₅ removal during chemical mechanical planarization in acidic H₂O₂ slurry He Ao-Dong (何敖东), Song Zhi-Tang (宋志棠), Liu Bo (刘波), Zhong Min (钟旻), Wang Liang-Yong (王良咏), Lü Ye-Gang (吕业刚), Feng Song-Lin (封松林). Chin. Phys. B, 2013, 22(1): 018503.
[8]	Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid Wang Liang-Yong(王良咏), Liu Bo(刘波), Song Zhi-Tang(宋志棠), Liu Wei-Li(刘卫丽), Feng Song-Lin(封松林), David Huang(黄丕成), and S.V Babu. Chin. Phys. B, 2011, 20(3): 038102.
[9]	Crystallization of Ge₂Sb₂Te₅ phase-change optical disk media Liu Bo (刘波), Ruan Hao (阮昊), Gan Fu-Xi (干福熹). Chin. Phys. B, 2002, 11(3): 293-297.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge2Sb2Te5

Cite this article:

Online attention

Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge₂Sb₂Te₅