Chin. Phys. B
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Chin. Phys. B  2012, Vol. 21 Issue (5): 056602    DOI: 10.1088/1674-1056/21/5/056602
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs
Luo Jie-Xina b,Chen Jinga,Zhou Jian-Huaa b,Wu Qing-Qinga b,Chai Zhana,Yu Taoa c,Wang Xia
1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China;
2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China;
3. The Key Laboratory of Thin Films of Jiangsu, Departments of Physics, Soochow University, Suzhou 215006, China

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