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Bipolar resistive switching in Cr-doped TiOx thin films |
| Xing Zhong-Wen(邢钟文)a)b)†, X. Chenb), N. J. Wub), and A. Ignatievb) |
| a National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China; b Center for Advanced Materials and Department of Physics, University of Houston, Houston, TX 77204, USA |
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Abstract The electric-pulse-induced resistive switching effect is studied for Ti0.85Cr0.15Ox (TCO) films grown on Ir—Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse-induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.
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Received: 08 February 2011
Revised: 14 June 2011
Accepted manuscript online:
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PACS:
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77.80.Fm
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(Switching phenomena)
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73.40.-c
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(Electronic transport in interface structures)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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Cite this article:
Xing Zhong-Wen(邢钟文), X. Chen, N. J. Wu, and A. Ignatiev Bipolar resistive switching in Cr-doped TiOx thin films 2011 Chin. Phys. B 20 097703
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