Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

doi:10.1088/1674-1056/20/4/047302

Abstract The energy band structure of single-layer graphene under one-dimensional electric and magnetic field modulation is theoretically investigated. The criterion for bandgap opening at the Dirac point is analytically derived with a two-fold degeneracy second-order perturbation method. It is shown that a direct or an indirect bandgap semiconductor could be realized in a single-layer graphene under some specific configurations of the electric and magnetic field arrangement. Due to the bandgap generated in the single-layer graphene, the Klein tunneling observed in pristine graphene is completely suppressed.

Keywords: gap opening at Dirac point single-layer graphene electric and magnetic superlattice second-order perturbation

Received: 09 December 2010
Revised: 08 January 2011
Accepted manuscript online:

PACS:	73.43.Cd	(Theory and modeling)
	73.61.Wp	(Fullerenes and related materials)
	73.50.Bk	(General theory, scattering mechanisms)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60776067 and 10974011).

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Lin Xin(林鑫), Wang Hai-Long(王海龙), Pan Hui(潘晖), and Xu Huai-Zhe(许怀哲) Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation 2011 Chin. Phys. B 20 047302

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Gap opening and tuning in single-layer graphene with combined electric and magnetic field modulation

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