Chin. Phys. B
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Chin. Phys. B  2010, Vol. 19 Issue (4): 047310    DOI: 10.1088/1674-1056/19/4/047310
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Pressure effect study on the IV property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
Wang Kai-Quna, Jian Ao-Quna, Zhang Bin-Zhena, Li Qiu-Zhub, Liu Xinb
a Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education, Taiyuan {\rm 030051, China; b National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China

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