Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement

doi:10.1088/1674-1056/19/4/047310

Abstract This paper discusses the $I$--$V$ property of the GaAs-based resonant tunnelling structure (RTS) under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke's law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the $I$--$V$ curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.

Keywords: resonant tunnelling structure $I$--$V$ curve photoluminescence measurement peak shift peak split full width at half maximum broadening

Received: 29 July 2009
Revised: 14 August 2009
Accepted manuscript online:

PACS:	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	85.30.Kk	(Junction diodes)
	78.55.Cr	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~50775209 and 50730009).

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Li Qiu-Zhu(李秋柱), Wang Kai-Qun(王楷群), Jian Ao-Qun(菅傲群), Liu Xin(刘鑫), and Zhang Bin-Zhen(张斌珍) Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement 2010 Chin. Phys. B 19 047310

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Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement

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