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Chinese Physics, 2007, Vol. 16(12): 3873-3878    DOI: 10.1088/1009-1963/16/12/054
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Two-photon absorption coefficient dichroism in II--VI semiconductor crystals

Ma Hong(马红)a), Ma Guo-Hong(马国宏)a)†, Ma Hong-Liang(马洪良)b), and Tang Sing-Hai(唐星海)c)
a Department of Physics, Shanghai University, Shanghai 200444, China; b Instrumental Analysis & Research Center, Shanghai University, Shanghai 200444, China; c Department of Physics, National University of Singapore, Singapore 119260
Abstract  Considering two beams propagate in semiconductor crystal, this paper discusses the polarization dependence of pump beam-induced intensity attenuation of probe beam due to two-photon absorption (TPA). Numerical calculation and experimental measurement demonstrate that TPA coefficient is polarization dependent. For homogeneous materials, probe beam attenuation arises from the imaginary part of diagonal and off-diagonal components of third-order nonlinear susceptibilities.
Keywords:  two-photon absorption      semiconductor crystals      nonlinear susceptibility      polarization dependence  
Accepted manuscript online: 
PACS:  78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))  
  78.20.Fm (Birefringence)  
Fund: Project supported by Science and Technology Commission of Shanghai municipal (Grant No~ 06PJ14042), Shanghai Municipal Education Commission (Grant No~06AZ089), and the Shanghai Leading Academic Discipline Program (Grant No~T0104).

Cite this article: 

Ma Hong(马红), Ma Guo-Hong(马国宏), Ma Hong-Liang(马洪良), and Tang Sing-Hai(唐星海) Two-photon absorption coefficient dichroism in II--VI semiconductor crystals 2007 Chinese Physics 16 3873

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