Investigation of the characteristics of GIDL current in 90nm CMOS technology
Chen Hai-Feng (陈海峰), Hao Yue (郝跃), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进城), Li Kang (李康), Cao Yan-Rong (曹艳荣), Zhang Jin-Feng (张金凤), Zhou Peng-Ju (周鹏举)
School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD) NMOSFET. This paper shows that the drain bias $V_{\rm D}$ has a strong effect on GIDL current as compared with the gate bias $V_{\rm G}$ at the same drain--gate voltage $V_{\rm DG}$. It is found that the difference between $I_{\rm D}$ in the off-state $I_{\rm D}-V_{\rm G}$ characteristics and the corresponding one in the off-state $I_{\rm D}-V_{\rm D}$ characteristics, which is defined as $I_{\rm DIFF}$, versus $V_{\rm DG}$ shows a peak. The difference between the influences of $V_{\rm D}$ and $V_{\rm G}$ on GIDL current is shown quantitatively by $I_{\rm DIFF}$, especially in 90nm scale. The difference is due to different hole tunnellings. Furthermore, the maximum $I_{\rm DIFF }$($I_{\rm DIFF,MAX})$ varies linearly with $V_{\rm DG}$ in logarithmic coordinates and also $V_{\rm DG}$ at $I_{\rm DIFF,MAX}$ with $V_{\rm F}$ which is the characteristic voltage of $I_{\rm DIFF}$. The relations are studied and some related expressions are given.
Received: 17 August 2005
Revised: 16 December 2005
Accepted manuscript online:
PACS:
85.30.De
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National High Technology Research and Development Program of China (Grant No 2003AA1Z1630) and the National Natural Science Foundation of China (Grant No 60376024).
Cite this article:
Chen Hai-Feng (陈海峰), Hao Yue (郝跃), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进城), Li Kang (李康), Cao Yan-Rong (曹艳荣), Zhang Jin-Feng (张金凤), Zhou Peng-Ju (周鹏举) Investigation of the characteristics of GIDL current in 90nm CMOS technology 2006 Chinese Physics 15 645
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