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Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films |
| Kai Chen(陈凯)1, Jianguo Zhao(赵见国)1,2,†, Yu Ding(丁宇)1, Wenxiao Hu(胡文晓)1, Bin Liu(刘斌)1,‡, Tao Tao(陶涛)1, Zhe Zhuang(庄喆)1, Yu Yan(严羽)1, Zili Xie(谢自力)1, Jianhua Chang(常建华)2,§, Rong Zhang(张荣)1,3, and Youliao Zheng(郑有炓)1 |
1 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China;
2 School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China;
3 Xiamen University, Xiamen 361005, China |
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Abstract Nonpolar (11—20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal—organic chemical vapor deposition (MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×1018 cm-3, a high Mg activation efficiency of 6.5%, an activation energy of 114 meV for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990 ℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.
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Received: 15 March 2023
Revised: 22 May 2023
Accepted manuscript online: 07 June 2023
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PACS:
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68.35.bg
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(Semiconductors)
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61.05.C-
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(X-ray diffraction and scattering)
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74.25.nd
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(Raman and optical spectroscopy)
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68.37.Ps
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(Atomic force microscopy (AFM))
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| Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2021YFB3601000 and 2021YFB3601002), the National Natural Science Foundation of China (Grant Nos. 62074077, 61921005, 61974062, 62204121, and 61904082), Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No. BE2021008-2), and the China Postdoctoral Science Foundation (Grant No. 2020M671441). |
Corresponding Authors:
Jianguo Zhao, Bin Liu, Jianhua Chang
E-mail: zhaojg@nuist.edu.cn;bliu@nju.edu.cn;jianhuachang@nuist.edu.cn
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Cite this article:
Kai Chen(陈凯), Jianguo Zhao(赵见国), Yu Ding(丁宇), Wenxiao Hu(胡文晓), Bin Liu(刘斌), Tao Tao(陶涛), Zhe Zhuang(庄喆), Yu Yan(严羽), Zili Xie(谢自力), Jianhua Chang(常建华), Rong Zhang(张荣), and Youliao Zheng(郑有炓) Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films 2024 Chin. Phys. B 33 016801
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