| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs |
| Zhi-Hang Tong(童志航)1,2, Peng Ding(丁芃)1,2, Yong-Bo Su(苏永波)1,2, Da-Hai Wang(王大海)1, and Zhi Jin(金智)1,2,† |
| 1 High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; 2 University of Chinese Academic of Sciences, Beijing 100049, China |
|
|
|
|
Abstract The T-gate stem height of InAlAs/InGaAs InP-based high electron mobility transistor (HEMT) is increased from 165 nm to 250 nm. The influences of increasing the gate stem height on the direct current (DC) and radio frequency (RF) performances of device are investigated. A 120-nm-long gate, 250-nm-high gate stem device exhibits a higher threshold voltage (V th) of 60 mV than a 120-nm-long gate devices with a short gate stem, caused by more Pt distributions on the gate foot edges of the high Ti/Pt/Au gate. The Pt distribution in Schottky contact metal is found to increase with the gate stem height or the gate length increasing, and thus enhancing the Schottky barrier height and expanding the gate length，which can be due to the increased internal tensile stress of Pt. The more Pt distributions for the high gate stem device also lead to more obvious Pt sinking, which reduces the distance between the gate and the InGaAs channel so that the transconductance (g m) of the high gate stem device is 70 mS/mm larger than that of the short stem device. As for the RF performances, the gate extrinsic parasitic capacitance decreases and the intrinsic transconductance increases after the gate stem height has been increased, so the RF performances of device are obviously improved. The high gate stem device yields a maximum f t of 270 GHz and f max of 460 GHz, while the short gate stem device has a maximum f t of 240 GHz and the f max of 370 GHz.
|
Received: 26 May 2020
Revised: 30 July 2020
Accepted manuscript online: 27 August 2020
|
|
PACS:
|
85.30.Tv
|
(Field effect devices)
|
| |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
85.30.-z
|
(Semiconductor devices)
|
|
| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61434006). |
|
Corresponding Authors:
†Corresponding author. E-mail: jinzhi@ime.ac.cn
|
Cite this article:
Zhi-Hang Tong(童志航), Peng Ding(丁芃), Yong-Bo Su(苏永波), Da-Hai Wang(王大海), and Zhi Jin(金智) Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs 2021 Chin. Phys. B 30 018501
|
1 Sun S X, Chang M M, Li M K, Ma L H, Zhong Y H, Li Y X, Ding P, Jin Z and Wei Z C 2019 Chin Phys. B 28 078501
2 Chau R, Datta S, Doczy M, Doyle B, Jin B, Kavalieros J, Majumdar A, Metz M and Radosavljevic M 2005 IEEE Trans. Nanotechnol. 4 153
3 Zhong Y H, Wong W B, Yang J, Sun S X, Chang M M, Duan Z Y, Jin Z and Ding P 2020 Solid-State Electron. 164 107613
4 Murata K, Sano K, Kitabayashi H, Sugitani S, Sugahara H and Enoki T 2004 IEEE J. Solid-State Circuit 39 207
5 Kim D H and del Alamo J A 2010 IEEE Electron Dev. Lett. 31 806
6 Zhong Y H, Sun S X, Wong W B, et al. 2017 Front. Inform. Technol. Electron. Eng. 18 1180
7 Kim D H, Brar B and del Alamo J A 2011 International Electron Devices Meeting, December 5-7, 2011, Washington, DC, USA, p. 319
8 Mei, X B, Yoshida W, Lange M, et al.2015 IEEE Electron Dev. Lett. 36 327
9 Kim D H, del Alamo J A, Chen P, et al. liangjiedizhihttps://doi.org/10.1109/IEDM.2010.5703453 2010 International Electron Devices Meeting, December 6-8, 2010, San Francisco, USA, p. 692
10 Yun D Y, Jo H B, Son S W, et al. 2018 IEEE Electron Dev. Lett. 39 1844
11 Moran D A J, McLelland H, Elgaid K, et al.2006 IEEE Trans. Electron Dev. 53 2920
12 Endoh A, Shinohara K, Awano Y, et al. 2010 Jpn. J. Appl. Phys. 49 14301
13 Takahashi T, Sato M, Nakasha Y, et al. 2012 IEEE Electron Dev. Lett. 33 206
14 Yoshida Tomohiro, Kobayashi K, Otsuji T, et al. 2014 Solid-State Electron. 102 93
15 Wang Z X, Lin D, Liu J W, et al. 2020 Chin. Phys. B 29 027301
16 Shinohara, K, Matsui T, Yamashita Y, et al.2002 J. Vac. Sci. Technol. B 20 2096
17 Zhong Y H, Zang H P, Sun S X, et al. 2016 Chin. J. Electron. 25 199
18 Jang J H, Kim S and Adesida I 2006 Jpn. J. Appl. Phys. 45 3349
19 Dammann M, Leuther A, Benkhelifa F, et al. 2003 Phys. Status Solidi A-Appl. Mater. 195 81
20 Shin S H, Kim T W, Song J I, et al. 2011 Solid-State Electron. 62 106
21 Chu L.H, Chang E Y, Chang L, et al.2007 IEEE Electron Dev. Lett. 28 82
22 Saranovac T, Hambitzer A, Ruiz D C, et al. 2017 IEEE Trans. Semicond. Manuf. 30 462
23 Suemitsu T, Ishii T, Yokoyama H, et al. liangjiedizhihttps://doi.org/10.1143/JJAP.38.L154 1999 Jpn. J. Appl. Phys. 38 154
24 Katz A and Dautremontsmith W C 1990 J. Appl. Phys. 67 6237
25 Alt A R, Marti D and Bolognesi C R 2013 IEEE Microw. Mag. 14 83
26 Muhammad A, Ding P, Chen C, et al. 2019 J. Nanosci. Nanotechnol. 19 2537
27 Ding, P, Chen C, Ding W C, et al.2016 Solid-State Electron. 123 1
28 Sun S X, Yang B, Zhong Y H, et al. 2020 J. Phys. D: Appl. Phys. 53 175107 |
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
