A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES
Xu Hai-bo (许海波)ab, Wang Guang-rui (王光瑞)b, Chen Shi-gang (陈式刚)b
a Graduate School, China Academy of Engineering Physics, Beijing 100088; b Center for Nonlinear Studies, Institute of Applied Physics and Computational mathematics, Beijing 100088
Abstract We develop a Frenkel-Kontorova model to analyze the microscopic origins of vacancy-line interactions in a pseudomorphic adsorbate system. The atomic positions in the ground states are obtained by use of the gradient method. Our numerical results can explain the 2×N reconstruction observed in Ga/Si(112).
Received: 11 January 2000
Revised: 02 March 2000
Accepted manuscript online:
PACS:
68.35.B-
(Structure of clean surfaces (and surface reconstruction))
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 19774049), and the Science Foundation of China Academy of Engineering Physics (Grant Nos. 970116 and 980112).
Cite this article:
Xu Hai-bo (许海波), Wang Guang-rui (王光瑞), Chen Shi-gang (陈式刚) A GENERALIZED FRENKEL-KONTOROVA MODEL OF THE Ga/Si(112) DIMERIZED OVERLAYER SYSTEM WITH VACANCIES 2000 Chinese Physics 9 611
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