An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

doi:10.1088/1674-1056/23/9/097102

Abstract An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

Keywords: gate-all-round nanowire tunneling field effect transistor band to band tunneling analytic model

Received: 30 November 2013
Revised: 20 March 2014
Accepted manuscript online:

PACS:	71.20.Nr	(Semiconductor compounds)
	73.43.Jn	(Tunneling)
	73.43.Cd	(Theory and modeling)
	73.25.+i	(Surface conductivity and carrier phenomena)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61274096, 61204043, 61306042, 61306045, and 61306132), the Guangdong Natural Science Foundation, China (Grant Nos. S2012010010533 and S2013040016878), the Shenzhen Science & Technology Foundation, China (Grant No. ZDSY20120618161735041), and the Fundamental Research Project of the Shenzhen Science & Technology Foundation, China (Grant Nos. JCYJ20120618162600041, JCYJ20120618162526384, JCYJ20130402164725025, and JCYJ20120618162946025), and the International Collaboration Project of the Shenzhen Science & Technology Foundation, China (Grant Nos. GJHZ20120618162120759, GJHZ20130417170946221, GJHZ20130417170908049, and GJHZ20120615142829482).

Corresponding Authors: He Jin
E-mail: frankhe@pku.edu.cn

Cite this article:

Liu Ying (刘颖), He Jin (何进), Chan Mansun (陈文新), Du Cai-Xia (杜彩霞), Ye Yun (叶韵), Zhao Wei (赵巍), Wu Wen (吴文), Deng Wan-Ling (邓婉玲), Wang Wen-Ping (王文平) An analytic model for gate-all-around silicon nanowire tunneling field effect transistors 2014 Chin. Phys. B 23 097102

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An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

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