Abstract Based on the theoretical results of inversion layers model and interpenetrating network model, we studied the anomalous Hall effect of heterogenous semiconductor samples, and obtained the following results: (1) the wider the sample energy gap, the higher the temper-ature at which anomalous Hall effect begins to appear; (2) the lower the sample resistivity, the higher the temperature at which anomalous Hall effect begins to appear, which is further verified in our experiment; (3) mobility is the main factor which determines what role p-n junction plays in sample Hall voltage; (4) for n-Ge sample with inversion layers structure, with the increase of p-type region, the Hall effect changes from normal n-type Hall effect to anomalous Hall effect of the single dip type, then to anomalous Hall effect of the second reversal type.
Received: 09 December 1994
Accepted manuscript online:
PACS:
72.20.My
(Galvanomagnetic and other magnetotransport effects)
JIANG WEI (姜伟), Lu Gang (鲁刚), Song Lu-wu (宋录武) THEORETICAL AND EXPERIMENTAL INVESTIGATION ON ANOMALOUS HALL EFFECT OF HETEROGENOUS SEMICONDUCTOR SAMPLES 1995 Acta Physica Sinica (Overseas Edition) 4 923
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