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Chin. Phys. B, 2019, Vol. 28(10): 107303    DOI: 10.1088/1674-1056/ab3e68

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors

Yang-Yan Guo(郭仰岩)1,2, Wei-Hua Han(韩伟华)1,2, Xiao-Song Zhao(赵晓松)1,2, Ya-Mei Dou(窦亚梅)1,2, Xiao-Di Zhang(张晓迪)1,2, Xin-Yu Wu(吴歆宇)1,2, Fu-Hua Yang(杨富华)1,2,3
1 Engineering Research Center for Semiconductor Integrated Technology & Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics. There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data, which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vg1 and Vg2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

Keywords:  junctionless nanowire transistors      temperature-dependent conductance      variable range hopping      localization length  
Received:  12 June 2019      Revised:  14 August 2019      Published:  05 October 2019
PACS:  73.63.Kv (Quantum dots)  
  72.20.Ee (Mobility edges; hopping transport)  
  71.23.An (Theories and models; localized states)  
  85.30.Tv (Field effect devices)  

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant No. 61327813).

Corresponding Authors:  Wei-Hua Han     E-mail:

Cite this article: 

Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Ya-Mei Dou(窦亚梅), Xiao-Di Zhang(张晓迪), Xin-Yu Wu(吴歆宇), Fu-Hua Yang(杨富华) Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors 2019 Chin. Phys. B 28 107303

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