Emerging properties of two-dimensional twisted bilayer materials

doi:10.1088/1674-1056/ab3e46

Abstract Recent studies in van der Waals coupled two-dimensional (2D) bilayer materials have demonstrated a new freedom for material engineering by the formation of moiré pattern. By tuning the twist angle between two layers, one can modulate their electronic band structures and therefore the associated electrical transport and optical properties, which are distinct from the original ones of each individual layer. These new properties excite great passion in the exploration of new quantum states and possible applications of 2D bilayers. In this article, we will mainly review the prevailing fabrication methods and emerging physical properties of twisted bilayer materials and lastly give out a perspective of this topic.

Keywords: two-dimensional materials twist angle moiré potential interlayer coupling

Received: 18 August 2019
Revised: 25 August 2019
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.-r	(Electrical properties of specific thin films)
	74.78.Fk	(Multilayers, superlattices, heterostructures)
	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2016YFA0300903 and 2016YFA0300804), National Equipment Program of China (Grant No. ZDYZ2015-1), Beijing Graphene Innovation Program, China (Grant No. Z181100004818003), Beijing Municipal Science & Technology Commission, China (Grant No. Z181100004218006), Bureau of Industry and Information Technology of Shenzhen, China (Graphene platform contract No. 201901161512), and the Key R&D Program of Guangdong Province, China (Grant No. 2019B010931001).

Corresponding Authors: Kaihui Liu
E-mail: khliu@pku.edu.cn

Cite this article:

Yang Cheng(程阳), Chen Huang(黄琛), Hao Hong(洪浩), Zixun Zhao(赵子荀), Kaihui Liu(刘开辉) Emerging properties of two-dimensional twisted bilayer materials 2019 Chin. Phys. B 28 107304

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