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Chin. Phys. B, 2017, Vol. 26(2): 028501    DOI: 10.1088/1674-1056/26/2/028501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Xin-Hai Yu(于新海), Yin-Tang Yang(杨银堂), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  The latch-up effect induced by high-power microwave (HPM) in complementary metal-oxide-semiconductor (CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency (PRF) is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPM-induced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.
Keywords:  high-power microwave      latch-up      repetitive pulse frequency      supply voltage dependence  
Received:  30 June 2016      Revised:  07 November 2016      Published:  05 February 2017
PACS:  85.30.Tv (Field effect devices)  
  84.40.-x (Radiowave and microwave (including millimeter wave) technology)  
Fund: Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214. XY.K).
Corresponding Authors:  Yu-Hang Zhang     E-mail:  yhzhang0916@foxmail.com

Cite this article: 

Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Xin-Hai Yu(于新海), Yin-Tang Yang(杨银堂), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾) Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter 2017 Chin. Phys. B 26 028501

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