Please wait a minute...
Chin. Phys. B, 2017, Vol. 26(1): 017805    DOI: 10.1088/1674-1056/26/1/017805

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Xiang Li(李翔)1, De-Gang Zhao(赵德刚)1,2, De-Sheng Jiang(江德生)1, Jing Yang(杨静)1, Ping Chen(陈平)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Wei Liu(刘炜)1, Xiao-Guang He(何晓光)1, Xiao-Jing Li(李晓静)1, Feng Liang(梁锋)1, Jian-Ping Liu(刘建平)3, Li-Qun Zhang(张立群)3, Hui Yang(杨辉)1,3, Yuan-Tao Zhang(张源涛)4, Guo-Tong Du(杜国同)4, Heng Long(龙衡)5, Mo Li(李沫)5
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
4. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China;
5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
Abstract  Four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with different well widths are grown by metal-organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.
Keywords:  InGaN/GaN multiple quantum wells      localization effect      well thickness     
Received:  13 May 2016      Published:  05 January 2017
PACS:  78.66.Fd (III-V semiconductors)  
  78.67.De (Quantum wells)  
  85.60.Jb (Light-emitting devices)  
  78.60.Fi (Electroluminescence)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), Science Challenge Project, China (Grant No. JCKY2016212A503), and One Hundred Person Project of the Chinese Academy of Sciences.
Corresponding Authors:  De-Gang Zhao     E-mail:

Cite this article: 

Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫) Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths 2017 Chin. Phys. B 26 017805

[1] Ji P F, Liu N X, Wei X C, Liu Z, Lu H X, Wang J X and Li J M 2011 J. Semicond. 32 103001
[2] Wang Q, Ji Z W, Wang F, Mu Q, Zheng Y J, Xu X G, Lu Y J and Feng Z H 2015 Chin. Phys. B 24 024219
[3] Fu B L, Liu N X, Liu Z, Lu H X, Li J M and Wang J X 2014 J. Semicond. 35 114007
[4] Li X, Liu Z S, Zhao D G, Jiang D S, Chen P, Zhu J J, Yang J, Le L C, Liu W, He X G, Li X J, Liang F, Zhang L Q, Liu J P and Yang H 2015 Appl. Opt. 54 8706
[5] Ji X L, Yang F H, Wang J X, Duan R F, Ding K, Zeng Y P, Wang G H and Li J M 2010 J. Semicond. 31 094009
[6] Sun Q, Yan W, Feng M X, Li Z C, Feng B, Zhao H M and Yang H 2016 J. Semicond. 37 044006
[7] Cao K W, Fu B L, Liu Z, Zhao L X, Li J M and Wang J X 2016 J. Semicond. 37 014008
[8] Ko T S, Lu T C, Wang T C, Chen J R, Gao R C, Lo M H, Kuo H C, Wang S C and Shen J L 2008 J. Appl. Phys. 104 093106
[9] Liu W, Zhao D G, Jiang D S, Chen P, Liu Z S, Zhu J J, Shi M, Zhao D M, Li X, Liu J P, Zhang S M, Wang H and Yang H 2015 J. Alloys Compd. 625 266
[10] Schomig H, Halm S, Forchel A and Bacher G 2004 Phys. Rev. Lett. 92 1506802
[11] Narukawa Y, Kawakami Y, Fujita S, Fujita S and Nakamura S 1997 Phys. Rev. B 55 55
[12] Na J H, Taylor R A and Lee K H 2006 Appl. Phys. Lett. 89 253120
[13] Bai J, Wang T and Sakai S 2000 J. Appl. Phys. 88 4729
[14] Zhao K, Yang X, Xu B, Li D, Wang C and Feng L 2016 J. Electron. Mater. 45 786
[15] Wang T, Nakagawa D, Lachab M, Sugahara T and Sakai S 1999 Appl. Phys. Lett. 74 3128
[16] Li Z, Kang J, Wang B W, Li H, Weng Y H, Lee Y C, Liu Z, Yi X, Feng Z C and Wang G 2014 J. Appl. Phys. 115 083112
[17] Mohanta A, Wang S F, Young T F, Yeh P H, Ling D C, Lee M E and Jang D 2015 J. Appl. Phys. 117 144503
[18] Hoffmann V, Mogilatenko A, Netzel C, Zeimer U, Einfeldt S, Weyers M and Kneissl M 2014 J. Cryst. Growth 391 46
[19] Zhao D G, Jiang D S, Zhu J J, Wang H, Liu Z S, Zhang S M, Wang Y T, Jia Q J and Yang H 2010 J. Alloys Compd. 489 461
[20] Wang H, Ji Z, Qu S, Wang G, Jiang Y, Liu B, Xu X and Mino H 2012 Opt. Express 20 3932
[21] Langer T, Pietscher H G, Ketzer F A, Jonen H, Bremers H, Rossow U, Menzel D and Hangleiter A 2014 Phys. Rev. B 90 205302
[22] Liu W, Zhao D G, Jiang D S, Chen P, Liu Z S, Zhu J J, Shi M, Zhao D M, Li X, Liu J P, Zhang S M, Wang H, Yang H, Zhang Y T and Du G T 2015 Opt. Express 23 15934
[23] Eliseev P G, Perlin P, Lee J and Osiński M 1997 Appl. Phys. Lett. 71 569
[24] Eliseev P G, Osinski M, Lee J, Sugahara T and Sakai S 2000 J. Electron. Mater. 29 332
[25] Redaelli L, Mukhtarova A, Valdueza-Felip S, Ajay A, Bougerol C, Himwas C, Faure-Vincent J, Durand C, Eymery J and Monroy E 2014 Appl. Phys. Lett. 105 131105
[1] Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells
Chang-Fu Li(李长富), Kai-Ju Shi(时凯居), Ming-Sheng Xu(徐明升), Xian-Gang Xu(徐现刚), Zi-Wu Ji(冀子武). Chin. Phys. B, 2019, 28(10): 107803.
[2] Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode
Liu Wei, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Liu Zong-Shun, Zhu Jian-Jun, Li Xiang, Liang Feng, Liu Jian-Ping, Yang Hui. Chin. Phys. B, 2015, 24(12): 127801.
[3] Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells
Liang Ming-Ming, Weng Guo-En, Zhang Jiang-Yong, Cai Xiao-Mei, Lü Xue-Qin, Ying Lei-Ying, Zhang Bao-Ping. Chin. Phys. B, 2014, 23(5): 054211.
[4] Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content
Zhao Bi-Jun, Chen Xin, Ren Zhi-Wei, Tong Jin-Hui, Wang Xing-Fu, Li Dan-Wei, Zhuo Xiang-Jing, Zhang Jun, Yi Han-Xiang, Li Shu-Ti. Chin. Phys. B, 2013, 22(8): 088401.
No Suggested Reading articles found!