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Chin. Phys. B, 2017, Vol. 26(1): 017805    DOI: 10.1088/1674-1056/26/1/017805
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

Xiang Li(李翔)1, De-Gang Zhao(赵德刚)1,2, De-Sheng Jiang(江德生)1, Jing Yang(杨静)1, Ping Chen(陈平)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Wei Liu(刘炜)1, Xiao-Guang He(何晓光)1, Xiao-Jing Li(李晓静)1, Feng Liang(梁锋)1, Jian-Ping Liu(刘建平)3, Li-Qun Zhang(张立群)3, Hui Yang(杨辉)1,3, Yuan-Tao Zhang(张源涛)4, Guo-Tong Du(杜国同)4, Heng Long(龙衡)5, Mo Li(李沫)5
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;
4. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China;
5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China
Abstract  Four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with different well widths are grown by metal-organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.
Keywords:  InGaN/GaN multiple quantum wells      localization effect      well thickness     
Received:  13 May 2016      Published:  05 January 2017
PACS:  78.66.Fd (III-V semiconductors)  
  78.67.De (Quantum wells)  
  85.60.Jb (Light-emitting devices)  
  78.60.Fi (Electroluminescence)  
Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), Science Challenge Project, China (Grant No. JCKY2016212A503), and One Hundred Person Project of the Chinese Academy of Sciences.
Corresponding Authors:  De-Gang Zhao     E-mail:  dgzhao@red.semi.ac.cn

Cite this article: 

Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫) Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths 2017 Chin. Phys. B 26 017805

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