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Special Issue:
TOPICAL REVIEW — Low-dimensional complex oxide structures
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| TOPICAL REVIEW—Low-dimensional complex oxide structures |
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Aberration-corrected scanning transmission electron microscopy for complex transition metal oxides |
| Qing-Hua Zhang(张庆华)1, Dong-Dong Xiao(肖东东)2, Lin Gu(谷林)2,3 |
1 School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China |
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Abstract Lattice, charge, orbital, and spin are the four fundamental degrees of freedom in condensed matter, of which the interactive coupling derives tremendous novel physical phenomena, such as high-temperature superconductivity (high-Tc SC) and colossal magnetoresistance (CMR) in strongly correlated electronic system. Direct experimental observation of these freedoms is essential to understanding the structure-property relationship and the physics behind it, and also indispensable for designing new materials and devices. Scanning transmission electron microscopy (STEM) integrating multiple techniques of structure imaging and spectrum analysis, is a comprehensive platform for providing structural, chemical and electronic information of materials with a high spatial resolution. Benefiting from the development of aberration correctors, STEM has taken a big breakthrough towards sub-angstrom resolution in last decade and always steps forward to improve the capability of material characterization; many improvements have been achieved in recent years, thereby giving an in-depth insight into material research. Here, we present a brief review of the recent advances of STEM by some representative examples of perovskite transition metal oxides; atomic-scale mapping of ferroelectric polarization, octahedral distortions and rotations, valence state, coordination and spin ordering are presented. We expect that this brief introduction about the current capability of STEM could facilitate the understanding of the relationship between functional properties and these fundamental degrees of freedom in complex oxides.
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Received: 22 March 2016
Revised: 12 April 2016
Accepted manuscript online:
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PACS:
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68.37.Ma
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(Scanning transmission electron microscopy (STEM))
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77.55.-g
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(Dielectric thin films)
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31.15.ae
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(Electronic structure and bonding characteristics)
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75.47.Lx
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(Magnetic oxides)
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| Fund: Project supported by the National Key Basic Research Project, China (Grant No. 2014CB921002), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB07030200), and the National Natural Science Foundation of China (Grant Nos. 51522212 and 51421002). |
Corresponding Authors:
Lin Gu
E-mail: l.gu@iphy.ac.cn
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Cite this article:
Qing-Hua Zhang(张庆华), Dong-Dong Xiao(肖东东), Lin Gu(谷林) Aberration-corrected scanning transmission electron microscopy for complex transition metal oxides 2016 Chin. Phys. B 25 066803
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