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Chin. Phys. B, 2014, Vol. 23(4): 048301    DOI: 10.1088/1674-1056/23/4/048301

Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge2Sb2Te5

Yan Wei-Xiaa b, Wang Liang-Yonga, Zhang Ze-Fanga, Liu Wei-Lia, Song Zhi-Tanga
a State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
Abstract  The effect of iron trichloride (FeCl3) on chemical mechanical polishing (CMP) of Ge2Sb2Te5 (GST) film is investigated in this paper. The polishing rate of GST increases from 38 nm/min to 144 nm/min when the FeCl3 concentration changes from 0.01 wt% to 0.15 wt%, which is much faster than 20 nm/min for the 1 wt% H2O2-based slurry. This polishing rate trends are inversely correlated with the contact angle data of FeCl3-based slurry on the GST film surface. Thus, it is hypothesized that the hydrophilicity of the GST film surface is associated with the polishing rate during CMP. Atomic force microscope (AFM) and optical microscope (OM) are used to characterize the surface quality after CMP. The chemical mechanism is studied by potentiodynamic measurements such as Ecorr and Icorr to analyze chemical reaction between FeCl3 and GST surface. Finally, it is verified that slurry with FeCl3 has no influence on the electrical property of the post-CMP GST film by the resistivity-temperature (RT) tests.
Keywords:  chemical mechanical polishing      iron trichloride      Ge2Sb2Te5  
Received:  25 June 2013      Revised:  22 September 2013      Accepted manuscript online: 
PACS:  83.50.Jf (Extensional flow and combined shear and extension)  
Fund: Project supported by the National Integrate Circuit Research Program of China (Grant Nos. 2011ZX02704-002 and 2009ZX02030-001), the Funds from the Science and Technology Council of Shanghai, China (Grant Nos. 0952nm00200 and 10QB1403600), and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists.
Corresponding Authors:  Wang Liang-Yong     E-mail:
About author:  83.50.jf

Cite this article: 

Yan Wei-Xia, Wang Liang-Yong, Zhang Ze-Fang, Liu Wei-Li, Song Zhi-Tang Iron trichloride as oxidizer in acid slurry for chemical mechanical polishing of Ge2Sb2Te5 2014 Chin. Phys. B 23 048301

[1] Wang L Y, Song Z T, Zhong M, Liu W L, Yan W X, Qin F, He A D and Liu B 2012 Appl. Surf. Sci. 258 5185
[2] Castro D T, Goux L, Hurkx G A M, Attenborough K, Delhougne R, Lisoni J, Edema F J, Zandt M A A, Wolters R A M, Gravesteijn D J, Verheijen M A, Kaiser M, Weemaes R G R and Wouters D J 2007 Electron Devices Meeting, December 10-12, 2007, Washington, DC, p. 315
[3] Bez R 2009 Chalcogenide PCM: A Memory Technology for Next Decade IEEE IEDM Technology, December 7-9, 2009, Baltimore, MD, p. 1
[4] Sun Z M, Zhou J and Ahuja R 2006 Phys. Rev. Lett. 96 055507
[5] Zhang Z F, Liu W L and Song Z T 2011 J. Vac. Sci. Technol. B 29 011020
[6] Cui H, Cho J Y, Hwang H S, Lim J H, Park J H, Park H S, Hong K and Park J G 2010 J. Electrochem. Soc. 157 H1036
[7] Zhong M, Song Z T, Liu B, Feng S L and Chen B 2008 J. Electrochem. Soc. 155 H929
[8] Krishnan M, Nalaskowski J W and Cook L M 2010 Chem. Rev. 110 178
[9] Lee T Y, Lee I K, Choi B H and Park Y S 2007 US Patent Application 11967446 1-4
[10] Cui H, Cho J Y, Hwang H S, Lin J H, Park J H, Park H S, Hong K and Park J G 2011 J. Electrochem. Soc. 158 H666
[11] He A D, Song Z T, Liu B, Zhong M, Wang L Y, Lü Y G and Feng S L 2012 Chin. Phys. B 22 018503
[12] Cho Y J, Cui H, Park J H, Yi S H and Park J G 2010 Electrochem. Solid-State Lett. 13 H155
[13] Shin D H, Lee D H, Jeong M G, Park H S and Lim D S 2012 J. Electrochem. Soc. 159 H349
[14] Barr T L and Seal S 1995 J. Vac. Sci. Technol. A 13 1239
[15] Yan W X, Wang L Y, Zhang Z F, He A D, Zhong M, Liu W L, Wu L C and Song Z T 2012 Chin. Phys. Lett. 29 038301
[16] Bardal E 2003 Corrosion and Protection (New York: Springer) p. 65
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