Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(8): 086102    DOI: 10.1088/1674-1056/22/8/086102
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Zhang Zhan-Ganga b, Liu Jiea, Hou Ming-Donga, Sun You-Meia, Su Honga, Duan Jing-Laia, Mo Dana, Yao Hui-Juna, Luo Jiea, Gu Songa b, Geng Chaoa b, Xi Kaia b
a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ~ 41 MeV/(mg/cm2), which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ~ 9.5 MeV/(mg/cm2), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.
Keywords:  single event effects      effective LET method      multiple-bit upset      upset cross section     
Received:  31 October 2012      Published:  27 June 2013
PACS:  61.82.Fk (Semiconductors)  
  25.70.Bc (Elastic and quasielastic scattering)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).
Corresponding Authors:  Liu Jie     E-mail:  j.liu@impcas.ac.cn

Cite this article: 

Zhang Zhan-Gang, Liu Jie, Hou Ming-Dong, Sun You-Mei, Su Hong, Duan Jing-Lai, Mo Dan, Yao Hui-Jun, Luo Jie, Gu Song, Geng Chao, Xi Kai Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation 2013 Chin. Phys. B 22 086102

[1] Liu Z, Chen S M, Chen J J, Qin J R and Liu R R 2012 Chin. Phys. B 21 099401
[2] Heidel D F, Marshall P W, Pellish J A, Rodbell K P, LaBel K A, Schwank J R, Rauch S E, Hakey M C, Berg M D, Castaneda C M, Dodd P E, Friendlich M R, Phan A D, Seidleck C M, Shaneyfelt M R and Xapsos M A 2009 IEEE Trans. Nucl. Sci. 56 3499
[3] Dodd P E, Shaneyfelt M R, Schwank J R and Felix J A 2010 IEEE Trans. Nucl. Sci. 57 1747
[4] Raine M, Gaillardin M, Paillet P, Sauvestre J E, Duhamel O and Bournel A 2010 IEEE Trans. Nucl. Sci. 57 3219
[5] Duzellier S and Ecoffet R 1996 IEEE Trans. Nucl. Sci. 43 671
[6] Reed R A, Kinnison J, Pickel J C, Buchner S, Marshall P W, Kniffin S and LaBel K A 2003 IEEE Trans. Nucl. Sci. 50 622
[7] Mcnulty P J, Beauvais W J, Reed R A, Roth D R, Stassinopoulos E G and Brucker G J 1992 IEEE Trans. Nucl. Sci. 39 1622
[8] Guertin S M, Edmonds L D and Swift G M 2000 IEEE Trans. Nucl. Sci. 47 2380
[9] Dodd P E, Shaneyfelt M R and Sexton F W 1997 IEEE Trans. Nucl. Sci. 44 2256
[10] Petersen E L, Pickel J C, Smith E C, Rudeck P J and Letaw J R 1993 IEEE Trans. Nucl. Sci. 40 1888
[11] Swift G M and Guertin S M 2000 IEEE Trans. Nucl. Sci. 47 2386
[12] Petersen E L, Langworthy J B and Diehl S E 1983 IEEE Trans. Nucl. Sci. 30 4533
[13] Golke K W 1993 IEEE Trans. Nucl. Sci. 40 1910
[14] Criswell T L, Oberg D L, Wert J L, Measel P R and Wilson W E 1987 IEEE Trans. Nucl. Sci. 34 1316
[15] Sexton F W, Fu J S, Kohler R A and Koga R 1989 IEEE Trans. Nucl. Sci. 36 2311
[16] Tipton A D, Pellish J A, Hutson J M, Baumann R, Deng X, Marshall A, Xapsos M A, Kim H S, Friendlich M R, Campola M J, Seidleck C M, Label K A, Mendenhall M H, Reed R A, Schrimpf R D, Weller R A and Black J D 2008 IEEE Trans. Nucl. Sci. 55 2880
[17] Warren K M, Sierawski B D, Reed R A, Weller R A, Carmichael C, Lesea A, Mendenhall M H, Dodd P E, Schrimpf R D, Massengill L W, Hoang T, Wan H, De Jong J L, Padovani R and Fabula J J 2007 IEEE Trans. Nucl. Sci. 54 2419
[18] Liu M S, Liu H Y, Brewster N, Nelson D, Golke K W, Kirchner G, Hughes H L, Campbell A and Ziegler J F 2006 IEEE Trans. Nucl. Sci. 53 3487
[19] Zhang Q X, Hou M D, Liu J, Wang Z G, Jin Y F, Zhu Z Y and Sun Y M 2004 Acta Phys. Sin. 53 566 (in Chinese)
[20] Koga R, Crawford K B, Grant P B, Kolasinski W A, Leung D L, Lie T J, Mayer D C, Pinkerton S D and Tsubota T K 1993 Proceedings of Second European Conference on Radiation and Its Effects on Components and Systems, September 13-16, 1993, Saint-Malo, France, p. 485
[21] Olson B D, Ball D R, Warren K M, Massengill L W, Haddad N F, Doyle S E and McMorrow D 2005 IEEE Trans. Nucl. Sci. 52 2132
[1] Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool
Zhi-Feng Lei(雷志锋), Zhan-Gang Zhang(张战刚), Yun-Fei En(恩云飞), Yun Huang(黄云). Chin. Phys. B, 2018, 27(6): 066105.
[2] Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor
Jin-Xin Zhang(张晋新), Hong-Xia Guo(郭红霞), Xiao-Yu Pan(潘霄宇), Qi Guo(郭旗), Feng-Qi Zhang(张凤祁), Juan Feng(冯娟), Xin Wang(王信), Yin Wei(魏莹), Xian-Xiang Wu(吴宪祥). Chin. Phys. B, 2018, 27(10): 108501.
[3] Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor
Jin-Xin Zhang(张晋新), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Pei Li(李培), Bao-Long Guo(郭宝龙), Xian-Xiang Wu(吴宪祥). Chin. Phys. B, 2017, 26(8): 088502.
[4] Large energy-loss straggling of swift heavy ions in ultra-thin active silicon layers
Zhang Zhan-Gang, Liu Jie, Hou Ming-Dong, Sun You-Mei, Zhao Fa-Zhan, Liu Gang, Han Zheng-Sheng, Geng Chao, Liu Jian-De, Xi Kai, Duan Jing-Lai, Yao Hui-Jun, Mo Dan, Luo Jie, Gu Song, Liu Tian-Qi. Chin. Phys. B, 2013, 22(9): 096103.
[5] Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence
Geng Chao, Liu Jie, Xi Kai, Zhang Zhan-Gang, Gu Song, Hou Ming-Dong, Sun You-Mei, Duan Jing-Lai, Yao Hui-Jun, Mo Dan. Chin. Phys. B, 2013, 22(5): 059501.
[6] Radiation damage effects on power VDMOS devices with composite SiO2–Si3N4 films
Gao Bo, Liu Gang, Wang Li-Xin, Han Zheng-Sheng, Song Li-Mei, Zhang Yan-Fei, Teng Rui, Wu Hai-Zhou. Chin. Phys. B, 2013, 22(3): 036103.
No Suggested Reading articles found!