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Chin. Phys. B, 2013, Vol. 22(8): 086102    DOI: 10.1088/1674-1056/22/8/086102

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

Zhang Zhan-Ganga b, Liu Jiea, Hou Ming-Donga, Sun You-Meia, Su Honga, Duan Jing-Laia, Mo Dana, Yao Hui-Juna, Luo Jiea, Gu Songa b, Geng Chaoa b, Xi Kaia b
a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
b University of Chinese Academy of Sciences, Beijing 100049, China
Abstract  Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ~ 41 MeV/(mg/cm2), which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ~ 9.5 MeV/(mg/cm2), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.
Keywords:  single event effects      effective LET method      multiple-bit upset      upset cross section     
Received:  31 October 2012      Published:  27 June 2013
PACS:  61.82.Fk (Semiconductors)  
  25.70.Bc (Elastic and quasielastic scattering)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).
Corresponding Authors:  Liu Jie     E-mail:

Cite this article: 

Zhang Zhan-Gang, Liu Jie, Hou Ming-Dong, Sun You-Mei, Su Hong, Duan Jing-Lai, Mo Dan, Yao Hui-Jun, Luo Jie, Gu Song, Geng Chao, Xi Kai Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation 2013 Chin. Phys. B 22 086102

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