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Chin. Phys. B, 2013, Vol. 22(11): 118503    DOI: 10.1088/1674-1056/22/11/118503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector

Li Chong, Xue Chun-Lai, Li Chuan-Bo, Liu Zhi, Cheng Bu-Wen, Wang Qi-Ming
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Uni-traveling-carrier photodiodes (UTC-PDs) with ultrafast response and high saturation output are reported. A gradient doping layer and a narrow InP cliff layer were introduced to enhance the saturation and bandwidth characteristics. We measured the dark current, photo response, bandwidth, and saturation current of the fabricated UTC devices. For a 15-μm-diameter device, the dark current was 3.5 nA at a reverse bias of 1 V, and the 3-dB bandwidth was 17.2 GHz at a reverse bias of 5 V, which are comparable to the theoretically values. The maximum responsivity at 1.55 μm was 0.32 A/W. The saturation output current was over 19.0 mA without bias.
Keywords:  surface-illuminated uni-traveling-carrier photodiode      InP substrate     
Received:  12 March 2013      Published:  28 September 2013
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  78.55.Cr (III-V semiconductors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Corresponding Authors:  Xue Chun-Lai     E-mail:  clxue@semi.ac.cn

Cite this article: 

Li Chong, Xue Chun-Lai, Li Chuan-Bo, Liu Zhi, Cheng Bu-Wen, Wang Qi-Ming High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector 2013 Chin. Phys. B 22 118503

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