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Chin. Phys. B, 2013, Vol. 22(11): 117310    DOI: 10.1088/1674-1056/22/11/117310

Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal–insulator–semiconductor) structures

T. Ataseven, A. Tataroğlu
Physics Department, Faculty of Sciences, Gazi University, Teknikokullar, Ankara 06500, Turkey
Abstract  The dielectric properties of Au/Si3N4/n-Si (MIS) structures are studied using the admittance measurements (C–V and G/ω–V) each as a function of temperature in a range from 80 K to 400 K for two frequencies (100 kHz and 1 MHz). Experimental results show that both the dielectric constant (ε’) and the dielectric loss (ε") increase with temperature increasing and decrease with frequency increasing. The measurements also show that the ac conductivity (σac) increases with temperature and frequency increasing. The lnσac versus 1000/T plot shows two linear regions with different slopes which correspond to low (120 K–240 K) and high (280 K–400 K) temperature ranges for the two frequencies. It is found that activation energy increases with frequency and temperature increasing.
Keywords:  Au/Si3N4/n-Si (metal–insulator–semiconductor) structure      admittance measurements      dielectric properties      ac conductivity  
Received:  20 January 2013      Revised:  07 May 2013      Published:  28 September 2013
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))  
  77.22.Ch (Permittivity (dielectric function))  
  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
Fund: Projected supported by Gazi University Scientific Research Project (BAP), FEF. 05/2012-15.
Corresponding Authors:  A. Tataroğlu     E-mail:

Cite this article: 

T. Ataseven, A. Tataroğlu Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal–insulator–semiconductor) structures 2013 Chin. Phys. B 22 117310

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