Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

doi:10.1088/1674-1056/22/10/107703

Abstract Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal-oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si₃N₄ or SiO₂ for improving their tensile strain and simulate the strain profiles by using the finite difference time domain (FDTD) method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si₃N₄ is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.

Keywords: Ge nano-belts FDTD Si₃N₄ or SiO₂ uniaxially strain

Received: 29 March 2013
Revised: 11 July 2013
Accepted manuscript online:

PACS:	77.80.bn	(Strain and interface effects)
	78.20.Bh	(Theory, models, and numerical simulation)
	77.84.Bw	(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2012CB933503 and 2013CB632103), the National Natural Science Foundation of China (Grant Nos. 61176092, 61036003, and 60837001), the Ph. D. Program Foundation of the Ministry of Education of China (Grant No. 20110121110025), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2010121056).

Corresponding Authors: Li Cheng
E-mail: lich@xmu.edu.cn

Cite this article:

Lu Wei-Fang (卢卫芳), Li Cheng (李成), Huang Shi-Hao (黄诗浩), Lin Guang-Yang (林光杨), Wang Chen (王尘), Yan Guang-Ming (严光明), Huang Wei (黄巍), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩) Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics 2013 Chin. Phys. B 22 107703

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Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics

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