Scaling properties of phase-change line memory

doi:10.1088/1674-1056/21/9/098401

Abstract Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current-voltage (I-V) and resistance-voltage (R-V) characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of phase-change line memory. The results show that the resistive amorphous (RESET) power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

Keywords: phase-change memory line structure scaling properties three-dimensional simulation

Received: 31 December 2011
Revised: 18 April 2012
Accepted manuscript online:

PACS:	84.37.+q	(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.40.Hp	(Lithography, masks and pattern transfer)

Fund: Project supported by the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Key Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00602, and 2011CB932800), the National Natural Science Foundation of China (Grant Nos. 60906003, 60906004, 61006087, and 61076121), and the Science and Technology Council of Shanghai of China (Grant No. 1052nm07000).

Corresponding Authors: Du Xiao-Feng
E-mail: duxiaofeng@mail.sim.ac.cn

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Du Xiao-Feng (杜小锋), Song San-Nian (宋三年), Song Zhi-Tang (宋志棠), Liu Wei-Li (刘卫丽), Lü Shi-Long (吕士龙), Gu Yi-Feng (顾怡峰), Xue Wei-Jia (薛维佳), Xi Wei (席韡) Scaling properties of phase-change line memory 2012 Chin. Phys. B 21 098401

[1]	Ovshinsky S R 1968 Phys. Rev. Lett. 21 1450
[2]	Lacaita A L and Wouters D J 2008 Phys. Stat. Sol. A 205 2281
[3]	Bez R 2009 IEDM Tech. Dig. p. 1
[4]	Lee J I, Park H, Cho S L, Park Y L, Bae B J, Park J H, Park J S, An H G, Bae J S, Ahn D H, Kim Y T, Horii H, Song S A, Shin J C, Park S O, Kim H S, Chung U I, Moon J T and Ryu B I 2007 Tech. Dig. Symp. VLSI Technol. p. 102
[5]	Wuttig M and Yamada N 2007 Nat. Mater. 6 824
[6]	Pirovano A, Lacaita A L, Benvenuti A, Pellizzer F and Bez R 2004 IEEE Trans. Electron Dev. 51 452
[7]	Zhang T, Song Z T, Liu B, Liu W L, Feng S L and Chen B 2007 Chin. Phys. 16 2475
[8]	Liu B, Song Z T, Zhang T, Feng S L and Gan F X 2004 Chin. Phys. 13 1167
[9]	Liu B, Song Z T, Zhang T, Feng S L and Chen B 2004 Chin. Phys. 13 1947
[10]	Attenborough K, Hurkx G A M, Delhougne R, Perez J, Wang M T, Ong T C, Tran L, Roy D, Gravesteijn D J and van Duuren M J 2010 IEDM Tech. Dig. p 29.2.1
[11]	Raoux S, Rettner C T, Jordan-Sweet J L, Kellock A J, Topuria T, Rice P M and Miller D C 2007 J. Appl. Phys. 102 094305
[12]	Milliron D J, Raoux S, Shelby R M and Jordan-Sweet J L 2007 Nat. Mater. 6 352
[13]	Satoh H, Sugawara K and Tanaka K 2006 J. Appl. Phys. 99 024306
[14]	Raoux S, Jordan-Sweet J L and Kellock A J 2008 J. Appl. Phys. 103 114310
[15]	Zhang T, Liu B, Song Z T, Liu W L, Feng S L and Chen B 2005 Chin. Phys. Lett. 22 1803
[16]	Lee S H, Jung Y and Agarwal R 2007 Nat. Nanotech. 2 626
[17]	Lankhorst M H R, Ketelaars B W S M M and Wolters R A M 2005 Nat. Mater. 4 347
[18]	Chen Y C, Rettner C T, Raoux S, Burr G W, Chen S H, Shelby R M, Salinga M, Risk W P, Happ T D, McClelland G M, Breitwisch M, Schrott A, Philipp J B, Lee M H, Cheek R, Nirschl T, Lamorey M, Chen C F, Joseph E, Zaidi S, Yee B, Lung H L, Bergmann R and Lam C 2006 IEDM Tech. Dig. p. 1
[19]	Song S N, Song Z T, Liu B, Wu L C and Feng S L 2010 Appl. Phys. A 99 767
[20]	Gong Y F, Song Z T, Ling Y, Liu Y and Li Y J 2010 Chin. Phys. Lett. 27 068501

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