Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells

doi:10.1088/1674-1056/21/9/097301

Abstract A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/In_xGa_1-xN quantum wells is presented. The quantum-confined Stark effect induced by the built-in electric field and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrödinger and Poisson equations and the dispersion property of each type of phonon modes is considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. The present work can be helpful for the structural design and simulation of new semiconductor lasers.

Keywords: phonon-assisted intersubband transition wurtzite quantum well built-in electric field

Received: 02 January 2012
Revised: 21 March 2012
Accepted manuscript online:

PACS:	73.21.Fg	(Quantum wells)
	72.10.Di	(Scattering by phonons, magnons, and other nonlocalized excitations)
	77.65.Ly	(Strain-induced piezoelectric fields)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60966001) and the Science Foundation of Inner Mongolia Autonomous Region, China (Grant No. 2010BS0102).

Corresponding Authors: Ban Shi-Liang
E-mail: slban@imu.edu.cn

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Zhu Jun (朱俊), Ban Shi-Liang (班士良), Ha Si-Hua (哈斯花) Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1-xN quantum wells 2012 Chin. Phys. B 21 097301

[1]	Bhattacharya P, Zhang X K, Yuan Y, Kamath K K, Klotzkin D, Caneau C and Bhat R J 1998 Proc. SPIE 3283 702
[2]	Bhattacharya P and Ghosh S 2002 Appl. Phys. Lett. 80 3482
[3]	Williams B S 2007 Nature Photonics 1 517
[4]	Wang F, Guo X G and Cao J C 2010 Phys. Rev. B 81 045308
[5]	Chen Z, Tan Z Y, Han Y J, Zhang R, Guo X G, Li H, Cao J C and Liu H C 2011 Electron. Lett. 47 1002
[6]	Duan W H, Zhu J L and Gu B L 1994 Phys. Rev. B 49 14403
[7]	Stroscio M A 1996 J. Appl. Phys. 80 6864
[8]	Shi J J and Pan S H 1995 Phys. Rev. B 51 17681
[9]	Teng H B, Sun J P, Haddad G I, Stroscio M A, Yu S G and Kim K W 1998 J. Appl. Phys. 84 2155
[10]	Shi J J and Pan S H 1996 J. Appl. Phys. 80 3863
[11]	Kisin M V, Dutta M and Stroscio M A 2002 Int. J. High Speed Electron. Syst. 12 939
[12]	Wu B H, Cao J C, Xia G Q and Liu H C 2003 Eur. Phys. J. B 33 9
[13]	Sang H Y, Gu B Y, Wang X H and Chen K Q 2005 Phys. Lett. A 334 55
[14]	Wang X J, Wang L L, Huang W Q, Tang L M, Zou B S and Chen K Q 2006 Semicond. Sci. Technol. 21 751
[15]	Gao X, Botez D and Knezevic I 2008 J. Appl. Phys. 103 073101
[16]	Park S H, Ahn D and Lee Y T 2000 Jpn. J. Appl. Phys. 39 6601
[17]	Vallone M 2002 J. Appl. Phys. 91 9848
[18]	Lepkowski S P, Teisseyre H, Suski T, Perlina P, Grandjean N and Massies J 2001 Appl. Phys. Lett. 79 1483
[19]	Teisseyre H, Suski T, Lepkowski S P, Anceau S, Perlin P, Lefebvre P, Konczewicz L, Hirayama H and Aoyagi Y 2003 Appl. Phys. Lett. 82 1541
[20]	Qu Y and Ban S L 2010 Acta Phys. Sin. 59 4863 (in Chinese)
[21]	Qu Y and Ban S L 2011 J. Appl. Phys. 110 013722
[22]	Komirenko S M, Kim K W, Stroscio M A and Dutta M 1999 Phys. Rev. B 59 5013
[23]	Lee B C, Kim K W, Stroscio M A and Dutta M 1998 Phys. Rev. B 58 4860
[24]	Shi J J 2003 Phys. Rev. B 68 165335
[25]	Shi J J, Chu X L and Goldys E M 2004 Phys. Rev. B 70 115318
[26]	Li L, Liu D and Shi J J 2005 Eur. Phys. J. B 44 401
[27]	Park S H, Ahn D and Lee Y T 2001 Jpn. J. Appl. Phys. 40 L941
[28]	Pokatilov E P, Nika D L and Balandin A A 2004 J. Appl. Phys. 95 5626
[29]	Komirenko S M, Kim K W, Stroscio M A and Dutta M 2000 Phys. Rev. B 61 2034
[30]	Lü J T and Cao J C 2005 J. Appl. Phys. 97 033502
[31]	Wood C and Jena D 2008 Polarization Effects in Semiconductors (New York: Springer) pp. 42-56
[32]	Tuchman J A and Herman I P 1992 Phys. Rev. B 45 11929
[33]	Guo X G, Tan Z Y, Cao J C and Liu H C 2009 Appl. Phys. Lett. 94 201101
[34]	Wu J Q 2009 J. Appl. Phys. 106 011101

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Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells

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Phonon-assisted intersubband transitions in wurtzite GaN/In_xGa_1-xN quantum wells