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Chin. Phys. B, 2012, Vol. 21(8): 084207    DOI: 10.1088/1674-1056/21/8/084207
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

Intersubband absorption with difference-frequency generation in GaAs asymmetric quantum wells

Cao Xiao-Longa c, Li Zhong-Yangb, Yao Jian-Quana c, Wang Yu-Yea c, Zhu Neng-Niana c, Zhong Kaia b, Xu De-Ganga b
a College of Precision Instrument and Opto-electronics Engineering, Institute of Laser and Opto-electronics, Tianjin University, Tianjin 300072, China;
b Institute of Electric Power, North China University of Water Resources and Electric Power, Zhengzhou 450011, China;
c Key Laboratory of Opto-electronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China
Abstract  An asymmetric quantum well (AQW) is designed to emit terahertz (THz) waves by using difference frequency generation (DFG) with the structure of GaAs/Al0.2Ga0.8As/Al0.5Ga0.5As. The characteristics of absorption coefficients are analysed under the parabolic and non-parabolic energy-band conditions in detail. We find that the absorption coefficients vary with the two pump optical intensities, and they reach the maxima when the pump wavelengths are given as λ p1=9.70 μm and λ p2=10.64 μm respectively. Compared with non-parabolic condition, the total absorption coefficient under parabolic condition shows a blue shift, which is due to the increase in the energy difference between the ground and excited states. By adjusting the two pump optical intensities, the wave vector phase-matching condition inside the AQW is satisfied.
Keywords:  asymmetric quantum wells      absorption coefficient      THz-wave      phase-matching  
Received:  12 August 2011      Revised:  15 January 2012      Published:  01 July 2012
PACS:  42.50.Nn (Quantum optical phenomena in absorbing, amplifying, dispersive and conducting media; cooperative phenomena in quantum optical systems)  
  78.67.De (Quantum wells)  
  42.65.-k (Nonlinear optics)  
  61.72.uj (III-V and II-VI semiconductors)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60801017, 61172010, 61101058, and 61107086) and the Fund from the Science and Technology Committee of Tianjin, China (Grant No. 11JCYBJC01100).
Corresponding Authors:  Cao Xiao-Long     E-mail:  caoxiaolong63@126.com

Cite this article: 

Cao Xiao-Long, Li Zhong-Yang, Yao Jian-Quan, Wang Yu-Ye, Zhu Neng-Nian, Zhong Kai, Xu De-Gang Intersubband absorption with difference-frequency generation in GaAs asymmetric quantum wells 2012 Chin. Phys. B 21 084207

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