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Chin. Phys. B, 2011, Vol. 20(5): 058503    DOI: 10.1088/1674-1056/20/5/058503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  An analytical expression for the collector resistance of a novel vertical SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate–collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μm millimeter-wave SiGe SOI BiCMOS devices.
Keywords:  collector resistance      substrate bias effect      SiGe heterojunction bipolar transistor      thin film silicon-on-insulator     
Received:  29 October 2010      Published:  15 May 2011
PACS:  85.30.Pq (Bipolar transistors)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.-z (Semiconductor devices)  
Fund: Project supported by National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

Cite this article: 

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Qu Jiang-Tao Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator 2011 Chin. Phys. B 20 058503

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