Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN

doi:10.1088/1674-1056/20/3/037805

Abstract This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity, and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution. The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time. The full width at half maximum of x-ray diffraction of (10-12) plane falls sharply after etching, and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time. The mechanism for the generation of the yellow luminescence are explained in details.

Keywords: N-polar GaN yellow luminescence KOH etching

Received: 19 July 2010
Revised: 01 November 2010
Accepted manuscript online:

PACS:	78.55.Cr	(III-V semiconductors)
	71.55.Eq	(III-V semiconductors)
	81.65.Cf	(Surface cleaning, etching, patterning)

Fund: Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the Major Program and Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033), and the Chinese Advance Research Program of Science and Technology (Grant Nos. 51308040301, 51308030102, 51311050112, and 51323030207).

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Du Da-Chao(杜大超), Zhang Jin-Cheng(张进成), Ou Xin-Xiu(欧新秀), Wang Hao(王昊), Chen Ke(陈珂), Xue Jun-Shuai(薛军帅), Xu Sheng-Rui(许晟瑞), and Hao Yue(郝跃) Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN 2011 Chin. Phys. B 20 037805

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Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN

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