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Chin. Phys. B, 2010, Vol. 19(11): 118105    DOI: 10.1088/1674-1056/19/11/118105
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Development of silicon purification by strong radiation catalysis method

Chen Ying-Tian(陈应天)a)b)c)†, Ho Tso-Hsiu(何祚庥)c), Lim Chern-Sing(林晨星)b), and Lim Boon Han(林文汉)b)
a Southern University of Science and Technology, Shenzhen 518055, China; b Yangzhou University, Yangzhou 225009, China; Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  Using a new type of solar furnace and a specially designed induction furnace,cost effective and highly efficient purification of metallurgical silicon into solar grade silicon can be achieved. It is realized by a new method for extracting boron from silicon with the aid of photo-chemical effect. In this article, we discussed the postulated principle of strong radiation catalysis and the recent development in practice. Starting from ordinary metallurgical silicon, we achieved a purification result of 0.12 ppmw to 0.3 ppmw of boron impurity in silicon by only single pass of a low cost and simple process, the major obstacle to make `cheap' solar grade silicon feedstock in industry is thus removed.
Keywords:  silicon purification      strong radiation catalysis      boron removal      solar furnace  
Accepted manuscript online: 
PACS:  82.50.-m (Photochemistry)  
  89.20.Bb (Industrial and technological research and development)  

Cite this article: 

Chen Ying-Tian(陈应天), Ho Tso-Hsiu(何祚庥), Lim Chern-Sing(林晨星), and Lim Boon Han(林文汉) Development of silicon purification by strong radiation catalysis method 2010 Chin. Phys. B 19 118105

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