The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

doi:10.1088/1674-1056/19/10/107301

Abstract Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si_{1 - X}Ge_X layer, a simple and accurate two-dimensional analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.

Keywords: the drain-induced barrier-lowering strained Si short channel effects silicon-germanium-on-insulator MOSFETs

Received: 29 March 2010
Revised: 28 April 2010
Published: 15 October 2010

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	73.61.-r	(Electrical properties of specific thin films)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010).

Cite this article:

Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs 2010 Chin. Phys. B 19 107301

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