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Chin. Phys. B, 2010, Vol. 19(10): 107301    DOI: 10.1088/1674-1056/19/10/107301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo
Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si1 - XGeX layer, a simple and accurate two-dimensional analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.
Keywords:  the drain-induced barrier-lowering      strained Si      short channel effects      silicon-germanium-on-insulator MOSFETs  
Received:  29 March 2010      Revised:  28 April 2010      Published:  15 October 2010
PACS:  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.61.-r (Electrical properties of specific thin films)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010).

Cite this article: 

Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs 2010 Chin. Phys. B 19 107301

[1] Khairurrijal, Mizubayashi W, Miyazaki S and Hirose M 2000 Appl. Phys. Lett. bf77 3580
[2] Hou Y T, Li M F and Lai W H 2001 Appl. Phys. Lett. bf78 4034
[3] Djeffal F, Meguellati M and Benhaya A 2009 Physica E bf41 1872
[4] Hoyt J L, Nayfeh H M and Eguchi S 2002 IEDM Tech. Dig. pp. 23--26
[5] Thompson S E, Armstrong M and Auth C 2004 IEEE Electron Device Lett. bf25 191
[6] Yin H Z, Hobart K D and Peterson R L 2005 IEEE Trans. Electron Devices bf52 2207
[7] Mizuno T, Sugiyama N and Kurobe A 2001 IEEE Trans. Electron Devices bf48 1612
[8] Zhou X 2000 IEEE Trans. Electron Devices bf47 113
[9] Venkataraman V, Nawal S and Kumar M J 2007 IEEE Trans. Electron Devices bf54 554
[10] Kumar M J, Venkataraman V and Nawal S 2006 IEEE Trans. Electron Devices bf53 1780
[11] Numata T, Mizuno T, Tezuka J, Koga and Takagi S 2005 IEEE Trans. Electron Devices bf52 554
[12] Yong K K 1989 IEEE Trans. Electron Devices bf36 399
[13] Sharma R K, Gupta M and Gupta R S 2009 Superlattices and Microstructures bf45 91
[14] Luan S Z, Liu H X, Jia R X and Cai N Q 2008 Acta Phys. Sin. bf57 3807 (in Chinese)
[15] Yang L F and Watling J R 2004 Semiconductor Science and Technology bf19 1174
[16] Zhang X J, Wang J P, Hao Y and Gong X 2006 Chin. Phys. bf15 631
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