A super junction SiGe low-loss fast switching power diode
Ma Li(马丽)a)† and Gao Yong(高勇)b)
a Department of Applied Physics, Xi'an University of Technology, Xi'an 710048, China; b Department of Electronics Engineering, Xi'an University of Technology, Xi'an 710048, China
Abstract This paper proposes a novel super junction (SJ) SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p+ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66V whereas that of the SJ SiGe diode is only 0.52 V at operating current density of 10 A/cm2. The breakdown voltages are 203 V for the former and 235 V for the latter. Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.
Received: 15 January 2008
Revised: 22 June 2008
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 50477012), the
Doctoral Program Foundation of Institutes of Higher Education of
China (Grant No 20050700006) and the Special Scientific Research
Program of the Education Burea
Cite this article:
Ma Li(马丽) and Gao Yong(高勇) A super junction SiGe low-loss fast switching power diode 2009 Chin. Phys. B 18 303
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