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Chin. Phys., 2007, Vol. 16(4): 1125-1128    DOI: 10.1088/1009-1963/16/4/044
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Light induced microstructure transformation in a-Si:H films

Ding Yia, He De-Yana, Liu Guo-Hanb, Zhang Wen-Lic, Chen Guang-Huac, Deng Jin-Xiangc
a School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; b School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China sjb)Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China ; c The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100022, China
Abstract  A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared (FTIR) spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.
Keywords:  hydrogenated amorphous silicon      Staebler--Wronski effect      microwave electron cyclotron resonant chemical vapour deposition  
Received:  23 May 2006      Revised:  24 August 2006      Published:  20 April 2007
PACS:  68.55.-a (Thin film structure and morphology)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  78.30.Ly (Disordered solids)  
  78.66.Jg (Amorphous semiconductors; glasses)  
Fund: Project supported by the National Basic Research Program of China (Grant No G2000028201).

Cite this article: 

Liu Guo-Han, Ding Yi, Zhang Wen-Li, Chen Guang-Hua, He De-Yan, Deng Jin-Xiang Light induced microstructure transformation in a-Si:H films 2007 Chin. Phys. 16 1125

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