A novel LDMOS with a junction field plate and a partial N-buried layer

doi:10.1088/1674-1056/23/12/127303

中国物理B ›› 2014, Vol. 23 ›› Issue (12): 127303-127303.doi: 10.1088/1674-1056/23/12/127303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A novel LDMOS with a junction field plate and a partial N-buried layer

石先龙^a, 罗小蓉^{a b}, 魏杰^a, 谭桥^a, 刘建平^a, 徐青^a, 李鹏程^a, 田瑞超^a, 马达^a

a State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
b Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

收稿日期:2014-06-30 修回日期:2014-08-07 出版日期:2014-12-15 发布日期:2014-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61376079), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062), and the Postdoctoral Science Foundation of China (Grant Nos. 2012T50771 and XM2012004).

A novel LDMOS with a junction field plate and a partial N-buried layer

Shi Xian-Long (石先龙)^a, Luo Xiao-Rong (罗小蓉)^{a b}, Wei Jie (魏杰)^a, Tan Qiao (谭桥)^a, Liu Jian-Ping (刘建平)^a, Xu Qing (徐青)^a, Li Peng-Cheng (李鹏程)^a, Tian Rui-Chao (田瑞超)^a, Ma Da (马达)^a

a State Key Laboratory of Electronic Thin Films and Integrated Devices. University of Electronic Science and Technology of China, Chengdu 610054, China;
b Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

Received:2014-06-30 Revised:2014-08-07 Online:2014-12-15 Published:2014-12-15
Contact: Luo Xiao-Rong E-mail:xrluo@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61376079), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062), and the Postdoctoral Science Foundation of China (Grant Nos. 2012T50771 and XM2012004).

摘要/Abstract

摘要：

A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (R_on.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in R_on.sp by 45.7% simultaneously.

关键词: junction field plate, partial N-buried layer, specific on-resistance, breakdown voltage

Abstract:

Key words: junction field plate, partial N-buried layer, specific on-resistance, breakdown voltage

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)

石先龙, 罗小蓉, 魏杰, 谭桥, 刘建平, 徐青, 李鹏程, 田瑞超, 马达. A novel LDMOS with a junction field plate and a partial N-buried layer[J]. 中国物理B, 2014, 23(12): 127303-127303.

Shi Xian-Long (石先龙), Luo Xiao-Rong (罗小蓉), Wei Jie (魏杰), Tan Qiao (谭桥), Liu Jian-Ping (刘建平), Xu Qing (徐青), Li Peng-Cheng (李鹏程), Tian Rui-Chao (田瑞超), Ma Da (马达). A novel LDMOS with a junction field plate and a partial N-buried layer[J]. Chin. Phys. B, 2014, 23(12): 127303-127303.

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A novel LDMOS with a junction field plate and a partial N-buried layer

A novel LDMOS with a junction field plate and a partial N-buried layer

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