|
|
Other articles related with "radiation effects"：
|
|
106103 |
Ning Liu(刘宁), Li-Min Zhang(张利民), Xue-Ting Liu(刘雪婷), Shuo Zhang(张硕), Tie-Shan Wang(王铁山), and Hong-Xia Guo(郭红霞) |
| |
|
Lattice damage in InGaN induced by swift heavy ion irradiation |
| |
|
|
Chin. Phys. B
2022 Vol.31 (10): 106103-106103
[Abstract]
(302)
[HTML 0 KB]
[PDF 1242 KB]
(56)
|
|
|
64211 |
Shen Tan(谭深), Yan Li(李彦), Hao-Shi Zhang(张浩石), Xiao-Wei Wang(王晓伟), and Jing Jin(金靖) |
| |
|
Loss prediction of three-level amplified spontaneous emission sources in radiation environment |
| |
|
|
Chin. Phys. B
2022 Vol.31 (6): 64211-064211
[Abstract]
(357)
[HTML 1 KB]
[PDF 954 KB]
(30)
|
|
|
57102 |
Guo-Dong Xiong(熊国栋), Hui-Ping Zhu(朱慧平), Lei Wang(王磊), Bo Li(李博), Fa-Zhan Zhao(赵发展), and Zheng-Sheng Han(韩郑生) |
| |
|
Evolution of optical properties and molecular structure of PCBM films under proton irradiation |
| |
|
|
Chin. Phys. B
2022 Vol.31 (5): 57102-057102
[Abstract]
(343)
[HTML 0 KB]
[PDF 2543 KB]
(66)
|
|
|
36103 |
Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华) |
| |
|
Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors |
| |
|
|
Chin. Phys. B
2022 Vol.31 (3): 36103-036103
[Abstract]
(392)
[HTML 1 KB]
[PDF 1500 KB]
(237)
|
|
|
56111 |
Shijun Zhao(赵仕俊) |
| |
|
Influence of temperature and alloying elements on the threshold displacement energies in concentrated Ni-Fe-Cr alloys |
| |
|
|
Chin. Phys. B
2021 Vol.30 (5): 56111-056111
[Abstract]
(511)
[HTML 1 KB]
[PDF 3382 KB]
(150)
|
|
|
16103 |
J Assaf |
| |
|
Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation |
| |
|
|
Chin. Phys. B
2018 Vol.27 (1): 16103-016103
[Abstract]
(578)
[HTML 1 KB]
[PDF 1198 KB]
(244)
|
|
|
104211 |
Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Rui Er-Ming (芮二明), Guo Li-Xin (郭立新), Yang Jian-Qun (杨剑群) |
| |
|
Incident particle range dependence of radiation damage in a power bipolar junction transistor |
| |
|
|
Chin. Phys. B
2012 Vol.21 (10): 104211-104211
[Abstract]
(1090)
[HTML 1 KB]
[PDF 503 KB]
(629)
|
|
|
80703 |
Liu Chao-Ming (刘超铭), Li Xing-Ji (李兴冀), Geng Hong-Bin (耿洪滨), Yang De-Zhuang (杨德庄), He Shi-Yu (何世禹 ) |
| |
|
Effect of bias condition on heavy ion radiation in bipolar junction transistor |
| |
|
|
Chin. Phys. B
2012 Vol.21 (8): 80703-080703
[Abstract]
(1522)
[HTML 1 KB]
[PDF 171 KB]
(705)
|
|
|
66103 |
Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭) |
| |
|
Degradation mechanisms of current gain in NPN transistors |
| |
|
|
Chin. Phys. B
2010 Vol.19 (6): 66103-066103
[Abstract]
(1588)
[HTML 1 KB]
[PDF 268 KB]
(1923)
|
|
|
56103 |
Li Xing-Ji(李兴冀), Geng Hong-Bin(耿洪滨), Lan Mu-Jie(兰慕杰), Yang De-Zhuang(杨德庄), He Shi-Yu(何世禹), and Liu Chao-Ming(刘超铭) |
| |
|
Radiation effects on MOS and bipolar devices by 8 MeV protons, 60 MeV Br ions and 1 MeV electrons |
| |
|
|
Chin. Phys. B
2010 Vol.19 (5): 56103-056103
[Abstract]
(1242)
[HTML 1 KB]
[PDF 2089 KB]
(1100)
|
|
|
3760 |
Li Dong-Mei(李冬梅), Wang Zhi-Hua(王志华), Huangfu Li-Ying(皇甫丽英), and Gou Qiu-Jing(勾秋静), |
| |
|
Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology |
| |
|
|
Chin. Phys. B
2007 Vol.16 (12): 3760-3765
[Abstract]
(1445)
[HTML 1 KB]
[PDF 991 KB]
(1724)
|
|
|
948 |
Zhang Guo-Qiang (张国强), Guo Qi (郭旗), Erkin (艾尔肯), Lu Wu (陆妩), Ren Di-Yuan (任迪远) |
| |
|
A novel technique for predicting ionizing radiation effects of commercial MOS devices |
| |
|
|
Chin. Phys. B
2004 Vol.13 (6): 948-953
[Abstract]
(1141)
[HTML 0 KB]
[PDF 182 KB]
(461)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
