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Other articles related with "power device"：
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98502 |
Yi Huang(黄义), Wen Yang(杨稳), Qi Wang(王琦), Sheng Gao(高升), Wei-Zhong Chen(陈伟中), Xiao-Sheng Tang(唐孝生), Hong-Sheng Zhang(张红升), and Bin Liu(刘斌) |
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NiO/β-Ga2O3 heterojunction diodes with ultra-low leakage current below 10-10 A and high thermostability |
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Chin. Phys. B
2023 Vol.32 (9): 98502-098502
[Abstract]
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[HTML 1 KB]
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47702 |
Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂) |
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SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current |
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Chin. Phys. B
2023 Vol.32 (4): 47702-047702
[Abstract]
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68504 |
Zheng-Xin Wen(温正欣), Feng Zhang(张峰), Zhan-Wei Shen(申占伟), Jun Chen(陈俊), Ya-Wei He(何亚伟), Guo-Guo Yan(闫果果), Xing-Fang Liu(刘兴昉), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平) |
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Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension |
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Chin. Phys. B
2019 Vol.28 (6): 68504-068504
[Abstract]
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[HTML 1 KB]
[PDF 1521 KB]
(276)
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87304 |
Li Wei-Yi(李惟一), Ru Guo-Ping(茹国平), Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚) |
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Trapezoid mesa trench metal–oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics |
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Chin. Phys. B
2011 Vol.20 (8): 87304-087304
[Abstract]
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