|
|
Other articles related with "parasitic bipolar amplification"：
|
|
38501 |
Xiaoyu Pan(潘霄宇), Hongxia Guo(郭红霞), Yinhong Luo(罗尹虹), Fengqi Zhang(张凤祁), Lili Ding(丁李利) |
| |
|
Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation |
| |
|
|
Chin. Phys. B
2018 Vol.27 (3): 38501-038501
[Abstract]
(659)
[HTML 0 KB]
[PDF 2130 KB]
(323)
|
|
|
79401 |
He Yi-Bai (何益百), Chen Shu-Ming (陈书明) |
| |
|
Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients |
| |
|
|
Chin. Phys. B
2014 Vol.23 (7): 79401-079401
[Abstract]
(557)
[HTML 1 KB]
[PDF 996 KB]
(448)
|
|
|
99401 |
Liu Zheng (刘征), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Qin Jun-Rui (秦军瑞), Liu Rong-Rong (刘蓉容) |
| |
|
Parasitic bipolar amplification in single event transient and its temperature dependence |
| |
|
|
Chin. Phys. B
2012 Vol.21 (9): 99401-099401
[Abstract]
(1268)
[HTML 1 KB]
[PDF 1004 KB]
(772)
|
|
|
16104 |
Chen Shu-Ming(陈书明) and Chen Jian-Jun(陈建军) |
| |
|
Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain |
| |
|
|
Chin. Phys. B
2012 Vol.21 (1): 16104-016104
[Abstract]
(1191)
[HTML 1 KB]
[PDF 351 KB]
(790)
|
|
|
16103 |
Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Deng Ke-Feng (邓科峰) |
| |
|
New insight into the parasitic bipolar amplification effect in single event transient production |
| |
|
|
Chin. Phys. B
2012 Vol.21 (1): 16103-016103
[Abstract]
(1292)
[HTML 1 KB]
[PDF 702 KB]
(755)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
