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Other articles related with "holding voltage"：
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108501 |
Jie-Yu Li(李婕妤), Yang Wang(汪洋)†, Dan-Dan Jia(夹丹丹), Wei-Peng Wei(魏伟鹏), and Peng Dong(董鹏) |
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New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications |
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Chin. Phys. B
2020 Vol.29 (10): 108501-
[Abstract]
(454)
[HTML 1 KB]
[PDF 9554 KB]
(113)
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98502 |
Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰) |
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Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications |
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Chin. Phys. B
2020 Vol.29 (9): 98502-098502
[Abstract]
(863)
[HTML 0 KB]
[PDF 1050 KB]
(168)
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68503 |
Ling Zhu(朱玲), Hai-Lian Liang(梁海莲), Xiao-Feng Gu(顾晓峰), Jie Xu(许杰) |
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Design of a novel high holding voltage LVTSCR with embedded clamping diode |
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Chin. Phys. B
2020 Vol.29 (6): 68503-068503
[Abstract]
(662)
[HTML 1 KB]
[PDF 645 KB]
(126)
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77304 |
Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波) |
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High holding voltage SCR for robust electrostatic discharge protection |
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Chin. Phys. B
2017 Vol.26 (7): 77304-077304
[Abstract]
(733)
[HTML 1 KB]
[PDF 1057 KB]
(435)
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108502 |
Zhang Shuai (张帅), Dong Shu-Rong (董树荣), Wu Xiao-Jing (吴晓京), Zeng Jie (曾杰), Zhong Lei (钟雷), Wu Jian (吴健) |
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An improved GGNMOS triggered SCR for high holding voltage ESD protection applications |
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Chin. Phys. B
2015 Vol.24 (10): 108502-108502
[Abstract]
(724)
[HTML 1 KB]
[PDF 370 KB]
(561)
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47303 |
Ma Jin-Rong (马金荣), Qiao Ming (乔明), Zhang Bo (张波) |
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Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application |
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Chin. Phys. B
2015 Vol.24 (4): 47303-047303
[Abstract]
(846)
[HTML 0 KB]
[PDF 308 KB]
(788)
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