|
|
Other articles related with "enhancement-mode"：
|
|
87102 |
Sheng Wu(武盛), Minhan Mi(宓珉瀚), Xiaohua Ma(马晓华), Ling Yang(杨凌), Bin Hou(侯斌), and Yue Hao(郝跃) |
| |
|
High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz |
| |
|
|
Chin. Phys. B
2021 Vol.30 (8): 87102-087102
[Abstract]
(615)
[HTML 1 KB]
[PDF 1074 KB]
(215)
|
|
|
87304 |
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃) |
| |
|
Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators |
| |
|
|
Chin. Phys. B
2020 Vol.29 (8): 87304-087304
[Abstract]
(659)
[HTML 0 KB]
[PDF 1089 KB]
(124)
|
|
|
18102 |
Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
| |
|
High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition |
| |
|
|
Chin. Phys. B
2019 Vol.28 (1): 18102-018102
[Abstract]
(609)
[HTML 1 KB]
[PDF 1276 KB]
(164)
|
|
|
87304 |
Xiao-Ling Duan(段小玲), Jin-Cheng Zhang(张进成), Ming Xiao(肖明), Yi Zhao(赵一), Jing Ning(宁静), Yue Hao(郝跃) |
| |
|
Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures |
| |
|
|
Chin. Phys. B
2016 Vol.25 (8): 87304-087304
[Abstract]
(700)
[HTML 1 KB]
[PDF 865 KB]
(412)
|
|
|
77304 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
| |
|
Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage |
| |
|
|
Chin. Phys. B
2014 Vol.23 (7): 77304-077304
[Abstract]
(663)
[HTML 1 KB]
[PDF 433 KB]
(538)
|
|
|
78503 |
Chen Chao (陈超), Tian Ben-Lang (田本朗), Liu Xing-Zhao (刘兴钊), Dai Li-Ping (戴丽萍), Deng Xin-Wu (邓新武), Chen Yuan-Fu (陈远富 ) |
| |
|
The effects of 60Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors |
| |
|
|
Chin. Phys. B
2012 Vol.21 (7): 78503-078503
[Abstract]
(1446)
[HTML 1 KB]
[PDF 123 KB]
(888)
|
|
|
58501 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
| |
|
Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor |
| |
|
|
Chin. Phys. B
2011 Vol.20 (5): 58501-058501
[Abstract]
(1518)
[HTML 0 KB]
[PDF 284 KB]
(851)
|
|
|
18101 |
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
| |
|
Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis |
| |
|
|
Chin. Phys. B
2011 Vol.20 (1): 18101-018101
[Abstract]
(1748)
[HTML 1 KB]
[PDF 634 KB]
(1110)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
