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117302 |
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Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz |
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Chin. Phys. B
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87305 |
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Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure |
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Chin. Phys. B
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47305 |
Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇) |
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A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates |
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Chin. Phys. B
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