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Other articles related with "dielectrics"：
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54210 |
Meng-Meng Zhao(赵萌萌), Shu-Fang Fu(付淑芳), Sheng Zhou(周胜), Yu-Ling Song(宋玉玲), Qiang Zhang(张强), Yong-Qi Yin(尹永琦), Yu-Tian Zhao(赵玉田), Hong Liang(梁红), Xuan-Zhang Wang(王选章) |
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Narrowband perfect terahertz absorber based on polar-dielectrics metasurface |
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Chin. Phys. B
2020 Vol.29 (5): 54210-054210
[Abstract]
(545)
[HTML 1 KB]
[PDF 1784 KB]
(174)
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127802 |
Kai-Lun Zhang(张凯伦), Zhi-Ling Hou(侯志灵), Song Bi(毕松), Hui-Min Fang(房惠敏) |
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Modeling for multi-resonant behavior of broadband metamaterial absorber with geometrical substrate |
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Chin. Phys. B
2017 Vol.26 (12): 127802-127802
[Abstract]
(744)
[HTML 0 KB]
[PDF 9692 KB]
(283)
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38103 |
Jia Ren-Xu (贾仁需), Dong Lin-Peng (董林鹏), Niu Ying-Xi (钮应喜), Li Cheng-Zhan (李诚瞻), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Yang Fei (杨霏), Zhang Yu-Ming (张玉明) |
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Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1-x gate dielectrics on 4H-SiC |
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Chin. Phys. B
2015 Vol.24 (3): 38103-038103
[Abstract]
(741)
[HTML 0 KB]
[PDF 347 KB]
(391)
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97303 |
Huang An-Ping(黄安平), Zheng Xiao-Hu(郑晓虎), Xiao Zhi-Song(肖志松), Yang Zhi-Chao(杨智超), Wang Mei(王玫), Paul K. Chu(朱剑豪), and Yang Xiao-Dong(杨晓东) |
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Flat-band voltage shift in metal-gate/high-k/Si stacks |
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Chin. Phys. B
2011 Vol.20 (9): 97303-097303
[Abstract]
(1320)
[HTML 1 KB]
[PDF 551 KB]
(3177)
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57701 |
Ye Chao(叶超) and Ning Zhao-Yuan(宁兆元) |
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Effect of F doping on capacitance－voltage characteristics of SiCOH low-k films metal－insulator－semiconductor structure |
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Chin. Phys. B
2010 Vol.19 (5): 57701-057701
[Abstract]
(1140)
[HTML 1 KB]
[PDF 209 KB]
(659)
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325 |
Han De-Dong (韩德栋), Kang Jin-Feng (康晋锋), Lin Chang-Hai (林长海), Han Ru-Qi (韩汝琦) |
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Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics |
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Chin. Phys. B
2003 Vol.12 (3): 325-327
[Abstract]
(1436)
[HTML 1 KB]
[PDF 178 KB]
(526)
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