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Other articles related with "TSC":
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110501 |
Qi Li(李琦), Xingyuan Wang(王兴元), He Wang(王赫), Xiaolin Ye(叶晓林), Shuang Zhou(周双), Suo Gao(高锁), and Yunqing Shi(施云庆) |
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A secure image protection algorithm by steganography and encryption using the 2D-TSCC |
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Chin. Phys. B
2021 Vol.30 (11): 110501-110501
[Abstract]
(432)
[HTML 0 KB]
[PDF 30007 KB]
(101)
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98502 |
Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰) |
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Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications |
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Chin. Phys. B
2020 Vol.29 (9): 98502-098502
[Abstract]
(783)
[HTML 0 KB]
[PDF 1050 KB]
(146)
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65205 |
Qing-Lai Qiu(仇庆来), Bing-Jia Xiao(肖炳甲), Yong Guo(郭勇), Lei Liu(刘磊), Yue-Hang Wang(汪悦航) |
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Comparison benchmark between tokamak simulation code and TokSys for Chinese Fusion Engineering Test Reactor vertical displacement control design |
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Chin. Phys. B
2017 Vol.26 (6): 65205-065205
[Abstract]
(723)
[HTML 1 KB]
[PDF 322 KB]
(297)
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128501 |
Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬) |
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Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress |
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Chin. Phys. B
2016 Vol.25 (12): 128501-128501
[Abstract]
(717)
[HTML 1 KB]
[PDF 2266 KB]
(289)
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47303 |
Ma Jin-Rong (马金荣), Qiao Ming (乔明), Zhang Bo (张波) |
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Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application |
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Chin. Phys. B
2015 Vol.24 (4): 47303-047303
[Abstract]
(775)
[HTML 0 KB]
[PDF 308 KB]
(778)
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1165 |
Wang Hong-Fu(王洪福) and Zhang Shou(张寿) |
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Implementation of n-qubit Deutsch--Jozsa algorithm using resonant interaction in cavity QED |
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Chin. Phys. B
2008 Vol.17 (4): 1165-1173
[Abstract]
(1874)
[HTML 0 KB]
[PDF 316 KB]
(840)
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2320 |
Yang Rong-Can(杨榕灿), Li Hong-Cai(李洪才), Lin Xiu(林秀), and Chen Mei-Xiang(陈美香) |
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Implementing the Deutsch--Jozsa algorithm by using Schrödinger cat states in cavity QED |
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Chin. Phys. B
2006 Vol.15 (10): 2320-2323
[Abstract]
(1325)
[HTML 1 KB]
[PDF 107 KB]
(468)
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