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Other articles related with "Si doping"：
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98104 |
Hong Wang(王虹), Zunren Lv(吕尊仁), Shuai Wang(汪帅), Haomiao Wang(王浩淼), Hongyu Chai(柴宏宇), Xiaoguang Yang(杨晓光), Lei Meng(孟磊), Chen Ji(吉晨), and Tao Yang(杨涛) |
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Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB |
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Chin. Phys. B
2022 Vol.31 (9): 98104-098104
[Abstract]
(396)
[HTML 0 KB]
[PDF 949 KB]
(51)
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108504 |
Hong Zhao(赵虹), Dan-Dan Peng(彭丹丹), Jun He(何军), Xin-Mei Li(李新梅), Meng-Qiu Long(龙孟秋) |
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Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons |
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Chin. Phys. B
2018 Vol.27 (10): 108504-108504
[Abstract]
(596)
[HTML 1 KB]
[PDF 1350 KB]
(247)
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106803 |
Lu Ping-Yuan (卢平元), Ma Zi-Guang (马紫光), Su Shi-Chen (宿世臣), Zhang Li (张力), Chen Hong (陈弘), Jia Hai-Qiang (贾海强), Jiang Yang (江洋), Qian Wei-Ning (钱卫宁), Wang Geng (王耿), Lu Tai-Ping (卢太平), He Miao (何苗) |
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Influence of Si doping on the structural and optical properties of InGaN epilayers |
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Chin. Phys. B
2013 Vol.22 (10): 106803-106803
[Abstract]
(768)
[HTML 1 KB]
[PDF 812 KB]
(599)
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77103 |
Zhang Wei(张伟), Xue Jun-Shuai(薛军帅), Zhou Xiao-Wei (周晓伟), Zhang Yue(张月), Liu Zi-Yang(刘子阳), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer |
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Chin. Phys. B
2012 Vol.21 (7): 77103-077103
[Abstract]
(1719)
[HTML 1 KB]
[PDF 3068 KB]
(1318)
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