Other articles related with "InGaZnO":
47102 Yi-Ni He(何伊妮), Lian-Wen Deng(邓联文), Ting Qin(覃婷), Cong-Wei Liao(廖聪维), Heng Luo(罗衡), Sheng-Xiang Huang(黄生祥)
  Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates
    Chin. Phys. B   2020 Vol.29 (4): 47102-047102 [Abstract] (638) [HTML 1 KB] [PDF 630 KB] (150)
18105 Jian Ke Yao(姚建可), Fan Ye(叶凡), Ping Fan(范平)
  Optical and electrical properties of InGaZnON thin films
    Chin. Phys. B   2020 Vol.29 (1): 18105-018105 [Abstract] (648) [HTML 1 KB] [PDF 1410 KB] (188)
87302 Wenxing Huo(霍文星), Zengxia Mei(梅增霞), Yicheng Lu(卢毅成), Zuyin Han(韩祖银), Rui Zhu(朱锐), Tao Wang(王涛), Yanxin Sui(隋妍心), Huili Liang(梁会力), Xiaolong Du(杜小龙)
  Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 87302-087302 [Abstract] (600) [HTML 1 KB] [PDF 1824 KB] (157)
17303 Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海)
  Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors
    Chin. Phys. B   2019 Vol.28 (1): 17303-017303 [Abstract] (712) [HTML 1 KB] [PDF 528 KB] (200)
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