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Other articles related with "III-nitride"：
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17104 |
Huihui He(何慧卉) and Shenyuan Yang(杨身园) |
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First-principles study on improvement of two-dimensional hole gas concentration and confinement in AlN/GaN superlattices |
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Chin. Phys. B
2022 Vol.31 (1): 17104-017104
[Abstract]
(362)
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[PDF 728 KB]
(73)
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127301 |
Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华) |
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Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy |
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Chin. Phys. B
2021 Vol.30 (12): 127301-127301
[Abstract]
(502)
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[PDF 1807 KB]
(75)
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88504 |
Bin Ren(任彬), Hui Guo(郭晖), Feng Shi(石峰), Hong-Chang Cheng(程宏昌), Hui Liu(刘晖), Jian Liu(刘健), Zhi-Hui Shen(申志辉), Yan-Li Shi(史衍丽), Pei Liu(刘培) |
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A theoretical and experimental evaluation of III-nitride solar-blind UV photocathode |
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Chin. Phys. B
2017 Vol.26 (8): 88504-088504
[Abstract]
(560)
[HTML 1 KB]
[PDF 886 KB]
(267)
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17804 |
Fang Hao(方浩),Long Hao(龙浩),Sang Li-Wen(桑立雯), Qi Sheng-Li(齐胜利),Xiong Chang(熊畅),Yu Tong-Jun(于彤军), Yang Zhi-Jian(杨志坚),and Zhang Guo-Yi(张国义) |
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Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition |
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Chin. Phys. B
2011 Vol.20 (1): 17804-017804
[Abstract]
(1603)
[HTML 0 KB]
[PDF 1916 KB]
(976)
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