Other articles related with "Al-doped ZnO":
16202 Qi Chen(陈启), Xinjian Li(李欣健), Yao Wang(王遥), Lijie Chang(常立杰), Jian Wang(王健), Yuewen Zhang(张跃文), Hongan Ma(马红安), and Xiaopeng Jia(贾晓鹏)
  Utilizing of high-pressure high-temperature synthesis to enhance the thermoelectric properties of Zn0.98Al0.02O with excellent electrical properties
    Chin. Phys. B   2021 Vol.30 (1): 16202- [Abstract] (453) [HTML 1 KB] [PDF 2285 KB] (215)
118506 Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢)
  High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer
    Chin. Phys. B   2016 Vol.25 (11): 118506-118506 [Abstract] (811) [HTML 0 KB] [PDF 866 KB] (325)
46106 Jia Zhi-Nan (贾志楠), Zhang Xiao-Dan (张晓丹), Liu Yang (刘阳), Wang Yan-Feng (王延峰), Fan Jun (樊君), Liu Cai-Chi (刘彩池), Zhao Ying (赵颖)
  Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods
    Chin. Phys. B   2014 Vol.23 (4): 46106-046106 [Abstract] (683) [HTML 1 KB] [PDF 1047 KB] (909)
68503 Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)
  AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO
    Chin. Phys. B   2013 Vol.22 (6): 68503-068503 [Abstract] (768) [HTML 1 KB] [PDF 359 KB] (1276)
First page | Previous Page | Next Page | Last PagePage 1 of 1