Pure spin-current diode based on interacting quantum dot tunneling junction
Zhengzhong Zhang(张正中)1,†, Min Yu(余敏)2,†, Rui Bo(薄锐)1, Chao Wang(王超)1, and Hao Liu(刘昊)1,‡
1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China; 2 The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing 210093, China
Abstract A magnetic field-controlled spin-current diode is theoretically proposed, which consists of a junction with an interacting quantum dot sandwiched between a pair of nonmagnetic electrodes. By applying a spin bias VS across the junction, a pure spin current can be obtained in a certain gate voltage regime,regardless of whether the Coulomb repulsion energy exists. More interestingly, if we applied an external magnetic field on the quantum dot, we observed a clear asymmetry in the spectrum of spin current IS as a function of spin bias, while the charge current always decays to zero in the Coulomb blockade regime. Such asymmetry in the current profile suggests a spin diode-like behavior with respect to the spin bias, while the net charge through the device is almost zero. Different from the traditional charge current diode, this design can change the polarity direction and rectifying ability by adjusting the external magnetic field, which is very convenient. This device scheme can be compatible with current technologies and has potential applications in spintronics or quantum processing.
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11404322) and the Natural Science Foundation of Huai'an (Grant No. HAB202150).
Corresponding Authors:
Hao Liu
E-mail: hyitliuh@163.com
Cite this article:
Zhengzhong Zhang(张正中), Min Yu(余敏), Rui Bo(薄锐), Chao Wang(王超), and Hao Liu(刘昊) Pure spin-current diode based on interacting quantum dot tunneling junction 2021 Chin. Phys. B 30 117305
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