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Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires |
| Meng-Zi Li(李梦姿), Xin-Liang Chen(陈新亮), Hong-Lai Li(李洪来), Xue-Hong Zhang(张学红), Zhao-Yang Qi(祁朝阳), Xiao-Xia Wang(王晓霞), Peng Fan(范鹏), Qing-Lin Zhang(张清林), Xiao-Li Zhu(朱小莉), Xiu-Juan Zhuang(庄秀娟) |
| Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, Hunan University, Changsha 410082, China |
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Abstract Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga0.75In0.25As0.49Sb0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm (0.636 eV). Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region (980 nm) with the external quantum efficiency of 2.0×104% and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.
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Received: 27 December 2017
Revised: 11 April 2018
Accepted manuscript online:
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PACS:
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81.07.Gf
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(Nanowires)
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74.70.Dd
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(Ternary, quaternary, and multinary compounds)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China. |
Corresponding Authors:
Xiao-Li Zhu, Xiu-Juan Zhuang
E-mail: zhuxiaoli@hnu.edu.cn;zhuangxj@hnu.edu.cn
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Cite this article:
Meng-Zi Li(李梦姿), Xin-Liang Chen(陈新亮), Hong-Lai Li(李洪来), Xue-Hong Zhang(张学红), Zhao-Yang Qi(祁朝阳), Xiao-Xia Wang(王晓霞), Peng Fan(范鹏), Qing-Lin Zhang(张清林), Xiao-Li Zhu(朱小莉), Xiu-Juan Zhuang(庄秀娟) Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires 2018 Chin. Phys. B 27 078101
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