Slip on the surface of silicon wafers under laser irradiation:Scale effect

doi:10.1088/1674-1056/26/11/116102

Abstract The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally, {110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip. The scale effect was shown to be an intrinsic property of silicon.

Keywords: slip silicon laser scale effect

Received: 05 May 2017
Revised: 18 August 2017
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	61.80.Ba	(Ultraviolet, visible, and infrared radiation effects (including laser radiation))
	61.80.-x	(Physical radiation effects, radiation damage)
	52.38.Mf	(Laser ablation)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61605079).

Corresponding Authors: Xiao-Wu Ni
E-mail: nxw@njust.edu.cn

Cite this article:

Zhi-Chao Jia(贾志超), Ze-Wen Li(李泽文), Jie Zhou(周洁), Xiao-Wu Ni(倪晓武) Slip on the surface of silicon wafers under laser irradiation:Scale effect 2017 Chin. Phys. B 26 116102

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