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Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits |
Xiaoxian Liu(刘晓贤), Zhangming Zhu(朱樟明), Yintang Yang(杨银堂), Ruixue Ding(丁瑞雪), Yuejin Li(李跃进) |
School of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract In this paper, ground-signal-ground type through-silicon vias (TSVs) exploiting air gaps as insulation layers are designed, analyzed and simulated for applications in millimeter wave. The compact wideband equivalent-circuit model and passive elements (RLGC) parameters based on the physical parameters are presented with the frequency up to 100 GHz. The parasitic capacitance of TSVs can be approximated as the dielectric capacitance of air gaps when the thickness of air gaps is greater than 0.75 μm. Therefore, the applied voltage of TSVs only needs to achieve the flatband voltage, and there is no need to indicate the threshold voltage. This is due to the small permittivity of air gaps. The proposed model shows good agreement with the simulation results of ADS and Ansoft's HFSS over a wide frequency range.
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Received: 23 May 2016
Revised: 30 June 2016
Accepted manuscript online:
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PACS:
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84.30.-r
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(Electronic circuits)
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84.30.Bv
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(Circuit theory)
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Fund: Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the National Natural Science Foundation of China (Grant Nos. 61376039, 61334003, 61574104, and 61474088). |
Corresponding Authors:
Zhangming Zhu
E-mail: zmyh@263.net
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Cite this article:
Xiaoxian Liu(刘晓贤), Zhangming Zhu(朱樟明), Yintang Yang(杨银堂), Ruixue Ding(丁瑞雪), Yuejin Li(李跃进) Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits 2016 Chin. Phys. B 25 118401
|
[1] |
Dong G, Shi T, Zhao Y B and Yang Y T 2015 Chin. Phys. B 24 056601
|
[2] |
Ma X K, Wang F Q and Liu W 2015 Chin. Phys. B 24 118401
|
[3] |
Yang Y T, Wu W S and Dong G 2015 Acta Phys. Sin. 64 026601(in Chinese)
|
[4] |
Wang Z H and Yu Y J 2015 Acta Phys. Sin. 64 238401(in Chinese)
|
[5] |
Liu X X, Zhu Z M, Yang Y T, Wang F J and Ding R X 2014 Chin. Phys. B 23 038401
|
[6] |
Qian L B, Zhu Z M, Xia Y S, Ding R X and Yang Y T 2014 Chin. Phys. B 23 038402
|
[7] |
Wang H G, Bao B C and Chen M 2014 Chin. Phys. B 23 087504
|
[8] |
Zhu Z M and Liu S B 2012 Chin. Phys. B 21 028401
|
[9] |
Katti G, Stucchi M, Meyer K D and Dehaene W 2010 IEEE Trans. Electron Devices 57 256
|
[10] |
Liu E X, Li E P, Ewe W B, Lee H M, Lim T G and Gao S 2011 IEEE Trans. Microw. Theory Technol. 59 1454
|
[11] |
Cheng T Y, Wang C D, Chiou Y P and Wu T L 2012 IEEE Microw. Wireless Compon. Lett. 22 303
|
[12] |
Xu C, Li H, Suaya R and Banerjee K 2010 IEEE Trans. Electron Devices 57 3405
|
[13] |
Ndip I, Curran B, Lobbicke K, Guttowski S, Reichl H, Lang K D and Henke H 2011 IEEE Trans. Compon. Packaging Manuf. Technol. 1 181
|
[14] |
Kim J, Park J S, Cho J, Song E, Cho J H, Kim H, Song T, Lee J, Lee H, Park K, Yang S, Suh M S, Byun K Y and Kim J H 2011 IEEE Trans. Compon. Packaging Manuf. Technol. 1 181
|
[15] |
Kim H, Cho J, Kim M, Kim K, Lee J, Lee H, Park K, Choi K, Bae H C, Kim J and Kim J 2012 IEEE Trans. Compon. Packaging Manuf. Technol. 2 1672
|
[16] |
Liu X X, Zhu Z M, Yang Y T and Ding R X 2015 IEEE Microw. Wirel. Compon. Lett. 25 424
|
[17] |
Liu X X, Zhu Z M, Yang Y T and Ding R X 2015 IEEE Microw. Wirel. Compon. Lett. 25 493
|
[18] |
Ryu C, Chung D, Lee J, Lee K, Oh T and Kim J 2005 Proceedings of14 th Electronic Performance of Electronic Packaging, Texas, America, October 24-26, 2005, p. 151
|
[19] |
Chen Q, Huang C, Wu D, Tan Z and Wang Z 2013 IEEE Trans. Electron Devices 60 1421
|
[20] |
Huang C, Chen Q and Wang Z 2013 IEEE Electron Dev. Lett. 34 441
|
[21] |
Chen Q, Huang C, Tan Z and Wang Z 2013 IEEE Trans. Compon. Packaging Manuf. Technol. 3 724
|
[22] |
Zhang L, Lim D, Li H, Gao S and Tan C 2012 Jpn. J. Appl. Phys. 51 04DB03
|
[23] |
Johnson H 2000 High Speed Dignal System Design (New York:John Wiley& Sons)
|
[24] |
Paul C R 2010 Inductance:Loop and Partial (New Jersey:John Wiley& Sons)
|
[25] |
Liang T, Hall S, Heck H and Brist G 2006 Proceedings of Microwave Symposium Digest, San Francisco, America, June 11-16, 2006, p. 1780
|
[26] |
Sze S M 2007 Physics of Semiconductor Devices (New York:John Wiley& Sons)
|
[27] |
Katti G, Stucchi M, Velenis D, Soree B, Meyer K D and Dehaene W 2010 IEEE Electron Dev. Lett. 32 563
|
[28] |
Manual of ANSOFT HFSS v15 [Online], Available:http://www.ansoft.com/products/hf/hfss/
|
[29] |
Brocard M, Maitre P L, Bermond C, Bar P, Anciant R, Farcy A, Lacrevaz T, Leduc P, Coudrain P, Hotellier N, Jamaa H B, Cheramy S, Sillon N, Marin J and Flechet B 2012 Proceedings of 62th Electronic Components and Technology Conference (ECTC), California, America, May 29-June 1, 2012, p. 665
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